IXTH13N110 Allicdata Electronics
Allicdata Part #:

IXTH13N110-ND

Manufacturer Part#:

IXTH13N110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1.1KV 13A TO-247AD
More Detail: N-Channel 1100V 13A (Tc) 360W (Tc) Through Hole TO...
DataSheet: IXTH13N110 datasheetIXTH13N110 Datasheet/PDF
Quantity: 14
Stock 14Can Ship Immediately
Specifications
Series: MegaMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1100V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 920 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5650pF @ 25V
FET Feature: --
Power Dissipation (Max): 360W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH13N110 is a high power MOSFET operating in the continuous conduction mode that is particularly suitable for high speed switching applications. This type of MOSFET is often referred to as a “single-ended” MOSFET, since it only requires a single power supply and has a single drain connection.

It is an excellent choice for many different applications, including high-power motor drivers, home appliances, industrial equipment, switching power supplies, and various other applications which require high speed, high current switching. In this article, we will explore the IXTH13N110 application field as well as its working principle.

The IXTH13N110 is designed for high power applications and typically features a low on-resistance of 0.35 Ohms (typical) and a drain-source breakdown voltage of ±13.5 volts across its drain-source junction. It also has a very low gate-source capacitance of 4 picofarads (typical). Additionally, it has a low gate charge of 135 nanoCoulombs (typical), which is significantly lower than the industry-standard of 450 nanoCoulombs. This allows it to deliver very high power, with up to a 20 Amps typical drain current and a 220 watts package total power dissipation.

The IXTH13N110 is primarily a depletion-mode device, meaning that the device remains off without a gate current. The device switches “on” when a voltage is applied to the gate causing electrons to migrate from the channel to the drain and source, creating an inversion region. This inversion region is then used to increase the current flow through the channel as a result of the quantum mechanical tunneling of electrons.

The IXTH13N110 has a threshold voltage of 2 volts which is required to turn the device on. It has a gate-source capacitance of 4pF (typical) which allows it to switch quickly and operate at higher frequencies. Additionally, it is available in a variety of packages, including a plastic dual in-line package and plastic small outline package. Additionally, it can be used in the automotive industry due to its AEC-Q101 qualification.

In conclusion, the IXTH13N110 is an excellent choice for many different applications including high power motor drivers, industrial equipment, and various other applications that require high speed, high current switching. It features a low on-resistance, high power dissipation, low gate charge, low threshold voltage, and is available in a variety of packages.

The specific data is subject to PDF, and the above content is for reference

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