| Allicdata Part #: | IXTH280N055T-ND |
| Manufacturer Part#: |
IXTH280N055T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 280A TO-247 |
| More Detail: | N-Channel 55V 280A (Tc) 550W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH280N055T Datasheet/PDF |
| Quantity: | 1000 |
| Series: | TrenchMV™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55V |
| Current - Continuous Drain (Id) @ 25°C: | 280A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9700pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 550W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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The IXTH280N055T is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device that is used in a wide range of electronic applications. This particular device is classified as an enhancement-mode transistor, and it features very low gate-source capacitance for high frequency switching applications. It is also capable of low on-resistance when used as a switch in a circuit.
An important factor when considering the application of transistors, such as the IXTH280N055T, is the source-drain voltage that it can handle. This transistor is rated for up to 55V in source-drain voltage, which makes it suitable for high voltage applications, such as car audio applications. In addition, the device has a low gate-source threshold voltage, making it suitable for use in low voltage applications.
The IXTH280N055T also has a low threshold voltage, making it ideal for use in other low voltage applications, such as analog circuits. This makes it suitable for use in power management circuitry or high-side driver applications. Additionally, the device has low gate charge, allowing for fast switching and low power consumption.
The IXTH280N055T MOSFET also has very low thermal resistance, making it suitable for use in high temperature applications. This makes it suitable for use in automotive, industrial, and aerospace applications. This device also has a very low threshold voltage and gate-drain voltage.
The IXTH280N055T MOSFET has an insulated gate, making it suitable for use in microwave applications. In these applications, the device acts as a relay, controlling the flow of energy between an input and output of the circuit. Also, it can be used as a variable resistor, allowing signal distortion in circuits. Additionally, it can be used as a high speed diode, controlling the direction of the current.
The working principle of the IXTH280N055T MOSFET is that a voltage applied to the gate will cause the current between the source and the drain to increase. When the voltage is removed, the current will decrease. Additionally, the device can be used in a wide range of applications, including as a switch in digital circuits, to control the direction of current and to amplify signals.
These devices are also used in a wide range of analog applications, such as in power control circuits. For example, the IXTH280N055T can be used to control the power to components in a power supply unit. Additionally, these devices can be used as power factor controllers, allowing better efficiency of an electrical system.
In conclusion, the IXTH280N055T MOSFET device is a versatile and reliable component that offers excellent performance in a range of applications, including high voltage, low voltage, analog and digital applications. Its wide source-drain voltage range and low gate-source capacitance make it suitable for use in high frequency applications. Its low thermal resistance, low threshold voltage and gate-drain voltage, and insulated gate make it suitable for use in microwave applications.
The specific data is subject to PDF, and the above content is for reference
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| IXTH180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-2... |
| IXTH182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-2... |
| IXTH200N075T | IXYS | -- | 1000 | MOSFET N-CH 75V 200A TO-2... |
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| IXTH220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
| IXTH220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
| IXTH230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-2... |
| IXTH240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
| IXTH250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-2... |
| IXTH280N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 280A TO-2... |
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