| Allicdata Part #: | IXTH130N10T-ND |
| Manufacturer Part#: |
IXTH130N10T |
| Price: | $ 2.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 130A TO-247 |
| More Detail: | N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO... |
| DataSheet: |  IXTH130N10T Datasheet/PDF |
| Quantity: | 80 |
| 1 +: | $ 2.35620 |
| 30 +: | $ 1.89105 |
| 120 +: | $ 1.72284 |
| 510 +: | $ 1.39509 |
| 1020 +: | $ 1.17659 |
| Series: | TrenchMV™ |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5080pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 360W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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The IXTH130N10T is a 10V N-channel enhancement-mode Field-Effect Transistor (FET). It is primarily composed of a metal oxide semiconductor (MOS), with the channel located between the source and the drain. It is an advanced FET technology with a least 250 times the current handling capability of previous generations. This type of transistor is well suited for applications requiring high current and low-voltage switching.
The IXTH130N10T is used in applications that require the transfer of large amounts of current with minimal voltage. These applications include switching power supplies, DC-DC converters, and other high-performance electronic applications. The IXTH130N10T can be used to control the power output from a power supply or from a battery. Additionally, this device can be used as a solid-state switch in lighting or displays. It can also be used in high-frequency switching circuits.
The IXTH130N10T works on the principle of enhancement-mode (EM) field-effect transistors. These devices operate by manipulating the voltage applied to the gate terminal to adjust the current flow between the source and drain terminals. A charge-transfer mechanism allows this current flow to be controlled in the range of a few amperes up to several hundred amperes. This makes the IXTH130N10T a great choice for applications requiring high-current transfer with minimal voltage.
The IXTH130N10T also contains a built-in self-protecting mechanism. This feature eliminates the need for external over-current protection components, saving space and reducing the total circuit cost. Additionally, the IXTH130N10T has a high tolerance to load conditions, making it an especially reliable device. As such, it is appropriate for many different applications.
In conclusion, the IXTH130N10T is a 10V N-channel enhancement-mode field-effect transistor. It contains a metal-oxide semiconductor and is used in applications that require high current and low-voltage switching. Due to its self-protecting mechanism and high tolerance to load conditions, the IXTH130N10T is a great choice for applications requiring high-current transfer with minimal voltage. It is used in many different applications from switching power supplies, DC-DC converters, and lighting and displays, to high-frequency switching circuits.
The specific data is subject to PDF, and the above content is for reference
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