IXTH1N200P3HV

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When discussing transistors and FETs, it is important to understand the IXTHN200P3HV application field and working principle. IXTHN200P3HV is a field-effect transistor, or FET, and is part of the Metal-Oxide Semiconductor FET (MOSFET) family which is most commonly used for voltage regulation and amplification.

An IXTHN200P3HV is a single N-channel MOSFET capable of switching a high-speed current of up to 200A and voltages ranging from 10V to 50V. It is suitable for low-side and high-side switching in automotive applications, offering a wide selection of drain-source voltage ratings to choose from. It is also capable of driving a wide range of load and has a very low on-resistance.

The IXTHN200P3HV is capable of handling larger currents and voltages than conventional low-side power MOSFETs due to the patented voltage-controlled body diode technology that enables it to perform "visible" reverse body recovery. This technology offers both true reverse body blocking and reverse body leakage protection. It also enables the FET to block large reverse voltages without causing drain-source breakdowns.

The IXTHN200P3HV is controlled by the voltage drop across its gate. By using a positive voltage at the gate, which is higher than the source voltage, an electric field is created with electron holes in the semiconductor material surrounding the gate. This causes the source-drain channel to open, allowing a current to flow between the source and drain. By applying a negative voltage to the gate, the current flow is stopped as the channel is blocked.

The IXTHN200P3HV is also equipped with built-in protection features such as a thermal shutdown protection. This feature prevents the device from overheating by limiting the maximum drain-source current. It also helps in reducing power dissipation and extending device lifetime.

The IXTHN200P3HV is well suited for switched mode power supplies, motor control circuits, power inverters, and other applications requiring a high load current without the need for an additional gate driver. It also offers robustness, electromagnetic interference immunity, and durability in high-temperature, high-humidity, and polluted environments.

This FET is designed to provide the highest switching speeds possible under its specified operating conditions. It has a low on-resistance enabling it to switch large currents with minimum losses. It also features a low input capacitance and a low gate-charge allowing it to be easily driven by low-power gate drivers.

In conclusion, the IXTHN200P3HV is a single N-channel MOSFET with a high-speed switching capability and a low on-resistance. This makes it a great choice for applications that require a high load current. It is also provided with thermal shutdown protection and a low input capacitance, enabling it to be used in a variety of applications such as switched mode power supplies, motor control circuits, and power inverters.

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