IXTH200N075T

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The IXTH200N75T is a high voltage N-channel enhancement mode MOSFET transistor. This hard to find transistor is made for high-temperature and demanding circuit applications. It is used in railway and power systems, lighting, protection circuits and general-purpose applications.

Although rare, the IXTH200N75T is becoming increasingly popular. Its unique characteristics make it a perfect choice for applications that require reliable, high-performance switching. This MOSFET transistor is designed with high voltage and high temperature tolerance, making it an ideal transistor for designing complex and demanding circuits.

The IXTH200N75T boasts an impressive drain-source breakdown voltage of 200V, a gate threshold voltage of 4V, an on-resistance of 36mohm, and a maximum temperature of 125°C for the silicon die.

The IXTH200N75T uses a three-lead MOSFET transistor outline that supports a variety of packages, such as the TO-220, TO-247, and TO-3PF packages. In terms of performance, this MOSFET transistor can handle up to a 31A at 25 degree Celsius datasheet limit with a maximum drain-source voltage of 200V. Moreover, its maximum drain current continuous at 25-degree Celsius is rated at 15A.

It is designed to work as a low-side MOSFET and can protect circuits from overcurrent and overvoltage. Additionally, it has excellent power dissipation capability and it is less susceptible to thermal runaway than p-channel MOSFETs. Additionally, it is an ideal choice for designing circuits as it has a low dropout voltage and high speed switching.

Due to its low charge and high speed, this transistor is used for high-speed digital circuits and frequency control. Furthermore, it is used for line protection and in current sensing circuits and RC protections.

The IXTH200N75T has an operation principle that is similar to that of a standard enhancement-mode MOSFET transistor. It operates by controlling the voltage according to the applied gate voltage. More precisely, the transistor can provide a linear current or voltage drop from the drain to the source when the gate voltage is increased.

To summarise, the IXTH200N75T is a reliable high-performance MOSFET transistor that finds applications in various industries. It has impressive characteristics such as a 200V breakdown voltage, high thermal tolerance, and a low on-resistance of 36mohm. This MOSFET transistor can be used in various applications such as railway, lighting, and protection circuits, and is ideal for designing circuits that are temperature and overvoltage prone.

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