| Allicdata Part #: | IXTH150N17T-ND |
| Manufacturer Part#: |
IXTH150N17T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 175V 150A TO-247 |
| More Detail: | N-Channel 175V 150A (Tc) 830W (Tc) Through Hole TO... |
| DataSheet: |  IXTH150N17T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | TrenchHV™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 175V |
| Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9800pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 830W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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The IXTH150N17T is a type of N Channel enhancement-mode MOSFET that can be used in a variety of switching applications. It has a relatively low on-resistance and is rated for operation at up to 150V. It can be used as a complement to p-type MOSFETs, allowing designers to create full-bridge circuits that can both switch voltage and current. In addition, the IXTH150N17T can also be used as an active element in signal routing and voltage regulation circuits.
As with other enhancement-mode MOSFETs, the IXTH150N17T is designed to be operated in the saturated region. This means that the FET acts as a low-resistance path between the drain and source terminals when a small gate-source voltage is applied. As a result, the current flowing through the FET is determined by the resistance between the drain and source terminals. This property makes it possible to use the IXTH150N17T as an active element in voltage regulation circuits. It can be used in conjunction with a voltage reference circuit to create a highly accurate feedback loop that ensures that the output voltage is stable and at the desired level.
In addition to voltage regulation, the IXTH150N17T can also be used in a variety of switching circuits. The low on-resistance of this MOSFET makes it an ideal choice for high-speed power switching. It is rated for operation up to 150V, which makes it suitable for use in low-voltage applications such as portable electronics. In addition, its low capacitance makes it ideal for use in logic-level switching circuits.
When used as a switch, the IXTH150N17T can be operated in either the linear or saturated region. In the linear region, the FET acts as a variable resistor, with the current through its terminals determined by the gate-source voltage. This property makes it ideal for use in adjustable current sources, or as a variable attenuator in signal processing circuits. In the saturated region, the device acts as a low-resistance switch that can quickly turn on or off when a small voltage is applied to the gate.
The IXTH150N17T is a versatile device that can be used in a variety of switching and voltage regulation applications. Its low on-resistance and high-voltage rating make it an ideal choice for a wide range of applications. It is also suitable for use in high-speed switching applications, thanks to its low capacitance and fast switching speeds. As such, it is widely used in a variety of consumer electronics, automotive and industrial systems.
The specific data is subject to PDF, and the above content is for reference
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