IXTH30N60P Allicdata Electronics
Allicdata Part #:

IXTH30N60P-ND

Manufacturer Part#:

IXTH30N60P

Price: $ 5.80
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 30A TO-247
More Detail: N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXTH30N60P datasheetIXTH30N60P Datasheet/PDF
Quantity: 62
1 +: $ 5.27310
30 +: $ 4.32201
120 +: $ 3.90033
510 +: $ 3.26786
1020 +: $ 2.84619
Stock 62Can Ship Immediately
$ 5.8
Specifications
Series: PolarHV™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
FET Feature: --
Power Dissipation (Max): 540W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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IXTH30N60P is a type of MOS Field Effect Transistor (MOSFET) developed by IXYS Corporation. This type of transistor is used in a variety of applications, such as switching, power control and motor control. As it is a unipolar mode device, it can easily be used for low and medium power applications without the need for special measures. It was designed to have low ON resistance, excellent power dissipation and low gate drive voltage requirements.

As a MOS Field Effect Transistor, the IXTH30N60P is made up of four terminals: drain, gate, source and body (or substrate). The gate of the transistor serves as an electrostatic gate to control the flow of charge carriers from the source to the drain. The source acts as the input, while the drain acts as the output. An external voltage is applied to the gate, which creates an electrostatic field that controls the impedance of the channel between the source and the drain, thereby allowing current to flow.

The IXTH30N60P has a blocking voltage of 600 volts and a maximum current of 30 Amps. It is available in both TO-220 package, with isolated mounting tab and isolated mounting surface and in SMD version with an isolated drain tab. Its high dV/dt and di/dt robustness ensures that it remains stable under changing input conditions. It is also designed with a low gate capacitance and a small gate resistance, giving it a lower switching threshold and a faster rise time.

The IXTH30N60P is mainly used for low and medium power switching applications where low on-resistance, high current handling capability and low gate drive power requirement is needed. It is perfectly suitable for telecom, automotive and industrial applications. It can be used as a switch in DC-DC converters, power management circuits and motor control circuits, as well as for power MOS applications and thyristor applications.

The IXTH30N60P operates by inducing a voltage on the gate terminal which, in turn, changes the channel resistance between the drain and the source, allowing current to pass through. This transistor offers excellent price – performance ration, making it one of the most popular MOSFETs in the market. The IXTH30N60P device is RoHS compliant and is guaranteed to meet the requirements of any modern systems designer.

The specific data is subject to PDF, and the above content is for reference

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