IXTH230N085T

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The IXTH230N085T is a single N-channel power MOSFET. It is designed to provide an efficient and cost-effective way to drive high-current and high-voltage devices. This device is suitable for a wide range of applications and is used in a variety of industrial, commercial, and consumer electronics products.

The IXTH230N085T is a vertical-structure power MOSFET, which is fabricated with a vertical trench gate structure. This feature, combined with the low drain-source on-resistance, offers superior performance with low input drive even for high-drain currents. The IXTH230N085T has a MOSFET drain current (ID) of 230A and a drain source voltage (VDS) of 5V or higher.

The IXTH230N085T has many benefits. It features a fast turn on and moderate turn off characteristics. It is designed with standard package configuration and offers flexibility in design. It has a low drain-source on-resistance and low input capacitance, making it suitable for high-frequency switching applications. The IXTH230N085T also features integrated zero-voltage and reverse-current protection.

The IXTH230N085T is commonly used in a wide range of applications, such as power supply converters, printers, lighting systems, motor drives, consumer appliances and telecommunications equipment. It is suitable for applications that require high voltage and high current, such as hard drives, audio amplifiers, welding applications, solar cell inverters and medical devices.

The main working principle of the IXTH230N085T is based on the vertical-structure power MOSFET. The operation of the device is based on the principle of minority carrier injection, in which the carriers (electrons or holes) injected from the substrate into the gate electrode cause the current flow between the drain and the source. The gate to source voltage (VGS) controls the current flow, thus allowing the device to be switched on and off as desired. Since the gate is insulated from the source and the drain, no additional gate bias voltage is necessary.

The IXTH230N085T is rated for continuous drain currents of up to 230A and pulsed drain currents of up to 760A. The device can also handle peak drain-source voltages up to 40V, making it suitable for a wide range of applications. The IXTH230N085T also features an ESD rating of up to 4000V, making it suitable for operation in applications requiring high ESD levels.

In conclusion, the IXTH230N085T is a single N-channel power MOSFET designed to provide an efficient and cost-effective way to drive high-current and high-voltage devices. It has a wide range of applications, such as power supply converters, printers, lighting systems, motor drives, consumer appliances, and telecommunications equipment. The main working principle of the IXTH230N085T is based on the vertical-structure power MOSFET, which operates on the principle of minority carrier injection. The IXTH230N085T is rated for continuous drain currents of up to 230A and peak drain-source voltages up to 40V, making it suitable for a wide range of applications.

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