IXTH52N65X Allicdata Electronics
Allicdata Part #:

IXTH52N65X-ND

Manufacturer Part#:

IXTH52N65X

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 52A TO-247
More Detail: N-Channel 650V 52A (Tc) 660W (Tc) Through Hole TO-...
DataSheet: IXTH52N65X datasheetIXTH52N65X Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 68 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
FET Feature: --
Power Dissipation (Max): 660W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH52N65X is a MOSFET with additional circuitry designed to improve performance and reduce power consumption. It is a single-gate transistor and has a maximum voltage of up to 65V. This MOSFET is suitable for various electronic applications, most notably its use as a power switch and as a DC-DC converter. It is an ideal choice for low-voltage applications and can be used in a variety of circuit designs.

A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of transistor with three terminals. The IXTH52N65X has an additional circuitry which improves its performance. It has a gate, drain and source which allows current to flow from the drain to the source when the gate voltage is positive. This MOSFET has a low-on resistance, making it suitable for use in switching circuit designs.

The IXTH52N65X is primarily used as a power switch for its low-voltage applications. It allows for a higher on resistance compared to an n-channel MOSFET with fast switching speeds. This makes the IXTH52N65X ideal for DC current applications and can be used as a power switch in a wide range of circuit designs. This MOSFET can also be used as a low-voltage DC-DC converter. It has a low-on resistance which makes it suitable for use in designs with a high-current need.

The IXTH52N65X has a maximum voltage of up to 65V and is suitable for a variety of electronic applications. It has a low gate threshold voltage, making it ideal for low-voltage operations. The IXTH52N65X can also be used in a variety of circuit designs, from digital circuits to low-voltage switching applications. It is an ideal choice for low-voltage operations and has a high enough on resistance for fast switching.

The working principle of the IXTH52N65X is based on the same principles of an n-channel MOSFET with additional circuitry designed to improve its performance. When the gate voltage is positive, current is allowed to flow from the drain to the source. This MOSFET has a low-on resistance and a high enough on resistance for fast switching. The additional circuitry helps to reduce power consumption and increase the transistor\'s overall performance.

In conclusion, the IXTH52N65X is a single-gate transistor with a maximum voltage of up to 65V. It is a MOSFET with additional circuitry designed to improve performance and reduce power consumption. It is an ideal choice for low-voltage applications and is primarily used as a power switch and as a DC-DC converter. The IXTH52N65X works on the same principles of an n-channel MOSFET, with a low-on resistance and a high enough on resistance for fast switching.

The specific data is subject to PDF, and the above content is for reference

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