2N7000RLRA Discrete Semiconductor Products |
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Allicdata Part #: | 2N7000RLRAOSTR-ND |
Manufacturer Part#: |
2N7000RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 200MA TO-92 |
More Detail: | N-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole T... |
DataSheet: | 2N7000RLRA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2N7000RLRA is a small signal, N-channel Silicon MOSFET. It is available with a variety of package options, including the RLRA version which has a drain lead that is slightly longer than the source lead to indicate the polarity of the component. It operates with a gate voltage of 4.5V and is capable of up to 500mA current and as such is suitable for breadboard prototyping applications.
The 2N7000RLRA is primarily used as a switching component with its low on-resistance helping to keep current losses to a minimum. It is also a logic level component which means that it turns on at 4.5V so there will be very little or no voltage drop across the component when it is in the ON state. This feature makes it an ideal choice for use in low voltage systems.
In addition to its use as a switching component, the 2N7000RLRA can also be used as an amplifier or in a variety of different analog applications. The low input capacitance of the component means that it is suitable for faster switching times which is useful in logic and digital applications. The small size of the component makes it ideal for use in hand-held electronics and other small form factor applications.
The working principle behind the 2N7000RLRA is based on the fact that when a voltage is applied to the Gate of the component, it creates an electric field which allows the electrons in the channel to flow freely between the Source and Drain. This electric field is created by the gate voltage and helps to reduce the resistance in the channel which allows an increased amount of current to flow from the Source to the Drain. The gate voltage can also be used to turn the component off by reducing or stopping the flow of electrons which then increases the resistance in the channel and reduces or completely stops the current flow.
The 2N7000RLRA is a widely used small signal MOSFET due to its small size, high current capacity, low input capacitance and low on-resistance. Its ability to be used as a switch, amplifier, and in a variety of analog applications makes it a versatile choice for anyone looking for a reliable MOSFET that can handle their needs.
The specific data is subject to PDF, and the above content is for reference
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