2N7002LT3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A field-effect transistor (FET) is a semiconductor device commonly used to control the flow of electrical current in electrical circuits. The 2N7002LT3G is a type of FET, specifically a depletion-mode MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in a variety of applications. It is considered to be a general-purpose FET because of its versatile design; however, it can be used for more specialized purposes as well.

The 2N7002LT3G is a low-voltage transistor capable of operating at low currents with low-cost manufacturing. It is designed using a 0.25 μm process size and consists of an N-channel MOSFET with a source resistance of 3 Ω and a threshold voltage of 1V. The drain-source on-resistance is low enough for use in switching applications, with a maximum static drain current of 350mA and a maximum on-state voltage of 0.25V. This transistor is rated for use at 40V and 150°C.

The 2N7002LT3G can be employed in a variety of applications, such as high-side switching, as an interface between logic and power circuits, or as a current source. Its low Tjang and low RDSON makes it ideal for use in applications that require low-temperature operation and energy-efficient operation. Additionally, the low gate threshold voltage makes it suitable for use with low-voltage circuits.

The 2N7002LT3G is capable of operating under three different modes of operation. The first mode of operation is called enhancement mode, in which the transistor is turned on (conductive) when a positive voltage is applied to the gate terminal. When a negative voltage is applied to the gate terminal, the transistor will be turned off (non-conductive). The second mode of operation is called depletion mode, which is the opposite of enhancement mode. In this mode, the transistor is turned on (conductive) when a negative voltage is applied to the gate terminal, and off (non-conductive) when a positive voltage is applied to the gate terminal. The third mode of operation is called dynamic mode, which is for use in high-frequency applications. In dynamic mode, the transistor is switched from enhancement to depletion mode, depending on the voltage applied to the gate terminal.

The working principle of the 2N7002LT3G is based on the MOSFET transistors. An MOSFET transistor is a semiconductor device consisting of a source, a drain, and a gate. When a voltage is applied to the gate terminal, it generates a field that acts like an electrical gate. This field changes the resistance between the source and the drain terminals, allowing either an increase or decrease of current flow. The 2N7002LT3G uses an N-channel MOSFET with a gate voltage applied in order to control the resistance between the source and the drain.

In conclusion, the 2N7002LT3G is an effective low-voltage FET that can be used in a variety of applications. Its low Tjang, low RDSON, and low gate threshold voltage are suitable for low-temperature and energy-efficient operations. It is capable of operating in three different modes of operation, and its low-cost manufacturing processes make it suitable for use in a wide range of circuits. It is a highly versatile transistor that is well suited for general-purpose and more specialized applications.

The specific data is subject to PDF, and the above content is for reference