2SK3430-AZ Allicdata Electronics
Allicdata Part #:

2SK3430-AZ-ND

Manufacturer Part#:

2SK3430-AZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 40V 80A TO220AB
More Detail: N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through...
DataSheet: 2SK3430-AZ datasheet2SK3430-AZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 84W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tube 
Description

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The 2SK3430-AZ is a P-Channel MOSFET from Toshiba Semiconductors. It was released in February 2015 and is an enhancement-mode MOSFET, meaning that its source is at the same potential as its body (threshold voltage), and the drain current is blocked until the gate-source voltage reaches a specific threshold voltage, at which point the device will turn on. This makes it suitable for high-side switching applications, such as load switches for high-current applications such as DC-DC converters.

The 2SK3430-AZ has a maximum drain current rating of 18A, a maximum drain-source voltage of 30V, and a gate-threshold voltage of 3.0V. It is available in the TO-220AB surface-mount package, which is a three-pin package with a drain tab and two source tabs, and is designed to dissipate large amounts of power. The device is also available in the SOT-89 package, which can also dissipate large amounts of power but has only one tab.

The 2SK3430-AZ is a power MOSFET, meaning that it can carry large amounts of current, and is ideal for applications that require high switching speeds and fast turn-on and turn-off times. It is also capable of low-level gate-source control, meaning that it is suitable for applications that require precise control such as lighting dimmers and motor speed controllers.

The 2SK3430-AZ is an ideal choice for applications requiring both high current capability and high speed. Its high drain-source voltage rating and low gate-threshold voltage make it suitable for high-side switching, as well as its low on-resistance and fast switching times. The device is also capable of low-level gate-source control, making it suitable for applications such as motors and lighting dimmers.

To summarize, the 2SK3430-AZ is a high-speed P-channel MOSFET with a drain-source voltage rating of 30V, a gate-threshold voltage of 3.0V, and a maximum drain current rating of 18A. It is available in the TO-220AB and SOT-89 packages and is suitable for applications requiring both high current capability and high speed. It is also suitable for applications requiring low-level gate-source control such as lighting dimmers and motor speed controllers. The device is ideal for high-side switching applications such as load switches for high-current applications such as DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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