2SK3541T2L Allicdata Electronics

2SK3541T2L Discrete Semiconductor Products

Allicdata Part #:

2SK3541T2LTR-ND

Manufacturer Part#:

2SK3541T2L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V .1A VMT3
More Detail: N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: 2SK3541T2L datasheet2SK3541T2L Datasheet/PDF
Quantity: 128000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 128000Can Ship Immediately
$ 0.05
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Package / Case: SOT-723
Supplier Device Package: VMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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2SK3541T2L is a type of power MOSFET (metal–oxide–semiconductor field-effect transistor) single device. MOSFETs are extremely versatile as they can act as amplifiers, switches, or even voltage regulators. It is a three-terminal device with its source connected between the drain and gate. 2SK3541T2L FETs are widely used for a myriad of applications, ranging from high-polished intermediate frequency (IF) and power conversion circuits to high-frequency matching circuits.

2SK3541T2L has a number of advantages over other components. It has a low drain to source on-resistance, allowing the device to operate in the linear region for a longer period of time. The device has a fast switching speed and low power losses, making it very efficient. Additionally, the pinch-off voltage is low enough to allow the device to operate in either an isolated or switched-mode application.

The underlying principle behind a 2SK3541T2L is the capacitive behavior of the gate region. In applied bias, electrons will flow through the gate-drain-source region, creating an electric field that controls the current flowing through the device. This control of the current is driven by the gate voltage – the higher the gate voltage, the greater the control and hence, the lower the current. As the voltage across the source and drain of the device is reduced, the gate then acts as a ‘pinch-off’, resisting further current flow. This gate control is what makes MOSFETs so versatile; as the current can be controlled over a vast range.

2SK3541T2L is typically used in intermediate frequency (IF) and power conversion circuits. The device’s fast switching and low power losses makes it an ideal choice or use with high-frequency matched circuits. Additionally, the low gate control voltage allows for effectiveness with either an isolated or switched-mode application. As a result, 2SK3541T2L devices are often used in audio amplification, motor control, cell phones, and other switch-mode power systems.

In conclusion, 2SK3541T2L is a three-terminal device with its source connected between the drain and gate. This type of MOSFET single device is widely used for a myriad of applications and is renowned for its low drain to source on-resistance and fast switching speed. As the gate voltage is applied, electrons flow through the gate-drain-source region, creating an electric field that controls the current flowing through the device. As a result, 2SK3541T2L devices are used for audio amplification, motor control, cell phones and other switch-mode power systems.

The specific data is subject to PDF, and the above content is for reference

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