2SK3816-DL-1E

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263-2
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.65W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1780pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	26 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	40A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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2SK3816-DL-1E is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). This type of transistor is ideal for use as a switch or amplifier as it can handle high-power loads efficiently due to its high breakdown voltage and maximum current rating. 2SK3816-DL-1E is a popular and versatile device, commonly used in power supply, motor control, and industrial automation applications.The 2SK3816-DL-1E MOSFET has an operating temperature range from -55°C to +150°C and is housed in an TO-220 package. It has a Drain-Source breakdown voltage of 20V, a gate-source threshold voltage of 1.9V, a gate-source voltage of 5V, and a maximum current rating of 12 Amps. The device also features an on-resistance of 0.3 ohms and a capacitance of 0.68pF. The 2SK3816-DL-1E MOSFET is a Field Effect Transistor (FET), which is a type of transistor that uses an electric field to control the conductivity of a semiconductor substrate. The FET has three terminals, specifically the source, drain, and gate. The source is the area of the substrate where current enters the transistor and the drain is the area where current leaves the transistor. The gate is located between the source and the drain and is used to control the flow of current through the substrate. When a voltage is applied to the gate, it creates a voltage drop across the drain-source terminals and the FET is turned on. The greater the voltage applied to the gate, the lower the on-resistance of the FET and the greater the current it can handle.The 2SK3816-DL-1E MOSFET is a single N-channel MOSFET, meaning it has only one high-power N-type channel and is ideal for use in applications that require one high-power switch or amplifier. It can also be used as a switch in high-powered motor control and industrial automation systems. Furthermore, its low capacitance and on-resistance makes it ideal for use in power supplies.In summary, the 2SK3816-DL-1E MOSFET is an all-purpose N-channel power MOSFET transistor with a maximum current rating of 12 Amps and a on-resistance of 0.3 ohms, making it an ideal choice for use in high-power applications. It is commonly used in motor control, power supply, and industrial automation applications.

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