APTM20HM08FG Allicdata Electronics
Allicdata Part #:

APTM20HM08FG-ND

Manufacturer Part#:

APTM20HM08FG

Price: $ 135.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 200V 208A SP6
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 200V 208A 781W...
DataSheet: APTM20HM08FG datasheetAPTM20HM08FG Datasheet/PDF
Quantity: 1000
100 +: $ 123.09300
Stock 1000Can Ship Immediately
$ 135.41
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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Arrays of FETs and MOSFETs (Field Effect Transistors) are an important class of devices used in a wide range of applications. An application field and working principle of the APTM20HM08FG FET/MOSFET array is discussed here. This device belongs to the type of vertical power FET array which combines multiple FETs and MOSFETs arranged in various configurations, allowing them to achieve good efficiency, low on-resistance and minimal power dissipation.

The main purpose of the APTM20HM08FG FET/MOSFET array is to provide low-impedance, high-frequency switching of power. It is suitable for applications such as inductive or resistive heating systems, AC/DC converters, DC/AC inverters, high-frequency DC/DC converters, and motor control.

The APTM20HM08FG FET/MOSFET array consists of four MOSFETs that are arranged in a package with a wide-body case. The active area of the device is equipped with four heat sinks which allow for efficient heat dissipation during operation.

The basic operation of a FET/MOSFET power array is based on the principle of voltage-controlled current gain and temperature-controlled threshold voltage. A gate-source voltage is applied to the gate of the MOSFET to control the flow of current through the source-drain capacitance. The drain-source voltage can be varied over a wide range depending upon the load impedance and gate voltage. The current gain of each device is typically limited to a maximum of 100V/V at room temperature.

The APTM20HM08FG FET/MOSFET array provides superior switching performance with low drain-source on-resistance and low switching losses. The device also operates at high frequencies, up to 1MHz, enabling for fast switching time and high-frequency ripple control. It also features over-temperature protection and a shut-off function.

In terms of reliability, the APTM20HM08FG FET/MOSFET array is designed for prolonged operation at high current levels with minimal power dissipation. It can operate at up to 85°C without degrading performance. In addition, the device also has an operating life of up to 1 million cycles without any significant degradation in performance.

In conclusion, the APTM20HM08FG FET/MOSFET array is a versatile device that can be used in a wide range of power switching applications. The device offers superior switching performance with low drain-source on-resistance and low switching losses. It can operate at up to 1MHz and up to 85°C without degrading performance. The device also has an operating life of up to 1 million cycles without any significant degradation in performance.

The specific data is subject to PDF, and the above content is for reference

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