Allicdata Part #: | APTM20HM08FG-ND |
Manufacturer Part#: |
APTM20HM08FG |
Price: | $ 135.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 200V 208A SP6 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 200V 208A 781W... |
DataSheet: | APTM20HM08FG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 123.09300 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 208A |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 14400pF @ 25V |
Power - Max: | 781W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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Arrays of FETs and MOSFETs (Field Effect Transistors) are an important class of devices used in a wide range of applications. An application field and working principle of the APTM20HM08FG FET/MOSFET array is discussed here. This device belongs to the type of vertical power FET array which combines multiple FETs and MOSFETs arranged in various configurations, allowing them to achieve good efficiency, low on-resistance and minimal power dissipation.
The main purpose of the APTM20HM08FG FET/MOSFET array is to provide low-impedance, high-frequency switching of power. It is suitable for applications such as inductive or resistive heating systems, AC/DC converters, DC/AC inverters, high-frequency DC/DC converters, and motor control.
The APTM20HM08FG FET/MOSFET array consists of four MOSFETs that are arranged in a package with a wide-body case. The active area of the device is equipped with four heat sinks which allow for efficient heat dissipation during operation.
The basic operation of a FET/MOSFET power array is based on the principle of voltage-controlled current gain and temperature-controlled threshold voltage. A gate-source voltage is applied to the gate of the MOSFET to control the flow of current through the source-drain capacitance. The drain-source voltage can be varied over a wide range depending upon the load impedance and gate voltage. The current gain of each device is typically limited to a maximum of 100V/V at room temperature.
The APTM20HM08FG FET/MOSFET array provides superior switching performance with low drain-source on-resistance and low switching losses. The device also operates at high frequencies, up to 1MHz, enabling for fast switching time and high-frequency ripple control. It also features over-temperature protection and a shut-off function.
In terms of reliability, the APTM20HM08FG FET/MOSFET array is designed for prolonged operation at high current levels with minimal power dissipation. It can operate at up to 85°C without degrading performance. In addition, the device also has an operating life of up to 1 million cycles without any significant degradation in performance.
In conclusion, the APTM20HM08FG FET/MOSFET array is a versatile device that can be used in a wide range of power switching applications. The device offers superior switching performance with low drain-source on-resistance and low switching losses. It can operate at up to 1MHz and up to 85°C without degrading performance. The device also has an operating life of up to 1 million cycles without any significant degradation in performance.
The specific data is subject to PDF, and the above content is for reference
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