APTM120U10SCAVG

APTM120U10SCAVG Application Field and Working Principle

The APTM120U10SCAVG device is an advanced Power MOSFET from Advanced Semiconductor Inc. This 60 V device, with an RMS Continuous/ Peak Power Ratings of 12A, is a versatile and robust power MOSFET for a wide range of applications, such as lighting, power conversion, motor control, instrumentation, general purpose switching, and automotive use.

Device Characteristics

The APTM120U10SCAVG device has a low on-resistance of 1.88 Ω max at 10V, making it suitable for high efficiency power flow and low power loss Appliances. It also features low gate charge and low gate-to-drain capacitance. The maximum junction to case thermal resistance is 0.40°C/W, making it suitable for applications with high power dissipation and increased efficiency.

Applications

The APTM120U10SCAVG device is suitable for a wide range of applications and supports a variety of technologies. It provides an efficient solution for motor control and lighting applications, as well as general-purpose switching and power conversion. It is also suitable for automotive and instrumentation use, providing excellent temperature performance and reliability.

In lighting applications, the APTM120U10SCAVG device is capable of efficiently driving LED’s. This device offers low on-resistance and low gate-charge, in addition to its low power dissipation. By utilizing these features, designers are able to minimize the number of components required and reduce overall design costs.

For motor control, this device features a high slew rate of 5A/µs and an ultra-low gate-to-drain charge of 6nC, allowing designers to easily control the speed of the motor in a reliable and efficient manner. This also enables designers to effectively control two different motors concurrently while being powered separately, in addition to providing an ultra-low input voltage.

The APTM120U10SCAVG device is also versatile enough for use in general-purpose switching and power conversion. It is capable of withstanding a high Voltage back-bias and transient over-Voltage conditions, providing designers with a high level of protection against sudden spikes or surges. Its low on-resistance characteristic enables higher efficiency in power transfer and management.

Working Principle

The APTM120U10SCAVG device is a Power MOSFET, which is an insulated gate transistor used for switching, amplification and in various other power management applications. It is constructed of two isolated metal plates. One plate is connected to the source terminal, while the other plate is connected to the drain terminal. The two plates are insulated by a layer of oxide and the gate terminal, which is connected to the metal plate on the drain terminal, is used to control the amount of current flowing through the device.

When the gate terminal is connected to a high voltage, current travels through the channel created between the two insulated metal plates. This is known as the saturation region, as the current can then travel through the channel without being affected by the voltage applied to the gate terminal. The strain in the semiconductor results in a low resistance and a high current flow.

When the gate voltage is reduced to a low voltage, the device becomes depleted, limiting the current flow and reducing the resistance. This region is called the “off” mode, and the device is said to be in its “off-state”. The APTM120U10SCAVG device offers excellent performance in this mode, as it can switch from “on” to “off” in a very short amount of time, ensuring that the device is not damaged during operation.

Conclusion

The APTM120U10SCAVG is an advanced Power MOSFET from Advanced Semiconductor Inc. that is suitable for a variety of applications, including lighting, power conversion, motor control, instrumentation, general purpose switching, and automotive use. This device features a low on-resistance of 1.88Ω max at 10V, making it suitable for high efficiency power flow and low power loss Appliances. It also provides excellent temperature performance and reliability, making it capable of withstanding high Voltage back-bias and transient over-Voltage conditions. This device is based on the principle of an insulated gate transistor, where a channel between two insulated metal plates is used for current flow, depending on the gate voltage applied.