APTM10DHM09T3G Allicdata Electronics
Allicdata Part #:

APTM10DHM09T3G-ND

Manufacturer Part#:

APTM10DHM09T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 100V 139A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 100V ...
DataSheet: APTM10DHM09T3G datasheetAPTM10DHM09T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: POWER MOS V®
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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Below is the article : Transistors - FETs, MOSFETs - Arrays APTM10DHM09T3G application field and working principle

The APTM10DHM09T3G is a three-gate MOS type transistor that is commonly used in a variety of applications. It has the ability to switch between two different modes of operation, making it versatile and easy to use. In this article, we will discuss theAPTM10DHM09T3G application field and working principle.

The APTM10DHM09T3G is a three-gate MOS type transistor and consists of a drain, a source, and three different gates. The three gates are labeled G1, G2, and G3, respectively and each one is connected to one of the source and drain terminals. The gates can be controlled to switch the transistor between two different modes of operation, e.g., linear mode and nonlinear mode. When the gates are in linear mode, the device behaves in a similar way to a conventional MOS transistor but with improved performance. When the device is in nonlinear mode, it can be used as a digital switch or an analog switch.

The device has an operating temperature range of -40°C to +105°C and an off-state VGS of -2V. The device is also resistant to static electricity and can handle a VGS rating of 20V. The gate-source capacitance is 0.4pF and gate-drain capacitance is 8pF.

One of the most common applications of the APTM10DHM09T3G is in switching and analog circuits. The three-gate MOS type transistor can be used as a unidirectional switch in both linear and nonlinear mode. It can also be used as a bidirectional switch, wherein the three gates are controlled to provide different switching paths. The transistor can also be used to control the current in analog circuits, such as those used in audio amplifiers, power supplies, and communication systems.

The APTM10DHM09T3G working principle relies on the fact that the three gates have different properties. When the drain and source terminals are connected to a voltage source, the voltage at G1, G2, and G3 have different values and can thus be used to control the current flow through the device. This current-control process is known as transistor level switching. Depending on the state of the gates, the current flow in the device can be switched on and off, thus controlling the voltage or current of the circuit.

In summary, the APTM10DHM09T3G is a three-gate MOS-type transistor and is used in a variety of applications. It is capable of switching between two different states, making it versatile and useful in analog and digital circuits. The three gates can be used to control the current in the device, allowing for transistor level switching.

The specific data is subject to PDF, and the above content is for reference

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