APTM100UM60FAG Allicdata Electronics
Allicdata Part #:

APTM100UM60FAG-ND

Manufacturer Part#:

APTM100UM60FAG

Price: $ 139.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 129A SP6
More Detail: N-Channel 1000V 129A (Tc) 2272W (Tc) Chassis Mount...
DataSheet: APTM100UM60FAG datasheetAPTM100UM60FAG Datasheet/PDF
Quantity: 1000
100 +: $ 126.89400
Stock 1000Can Ship Immediately
$ 139.58
Specifications
Vgs(th) (Max) @ Id: 5V @ 15mA
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2272W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 31100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1116nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 70 mOhm @ 64.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The APTM100UM60FAG MOSFET is an advanced power MOSFET designed for use in analog and digital power management applications. It is widely used in a variety of medium-power applications such as DC/DC converters, high-end power amplifiers, motor controls, and power supplies. The APTM100UM60FAG MOSFET is a compact, simple-to-use solution for medium-power applications.

The APTM100UM60FAG operates by an insulated-gate field effect semiconductor process. This type of semiconductor technology is great for efficient power conversion, as it allows for more electrical charge to be stored in a smaller area than other types of semiconductors. The MOSFET has a reverse-biased gate to channel region junction, which is what enables it to control the current flow in the channel region. When a voltage is applied, the resulting potential difference between the gate and channel region controls the current flow into and out of the channel. This makes it an effective way to regulate power in an efficient and effective way.

The MOSFET has a wide variety of applications; it is often used in low- and medium-power applications, such as DC/DC converters, motor control, Class D audio amplifiers, DC-to-DC power converters, and high-efficiency power supplies. It is also used in higher-power applications, such as switching and pulse-width modulation (PWM) for motor control and LED drivers. Additionally, the MOSFET can be used to build a number of different logic circuits.

In addition to its power efficiency, the APTM100UM60FAG MOSFET offers a number of other features. It is a self-biasing design, which allows it to be used without complex circuitry or biasing components. This self-biasing feature can also extend the lifetime of the MOSFET, as it minimizes the amount of power dissipated in the MOSFET due to leakage. The MOSFET also has excellent reliability and high surge handling capability, allowing it to handle large transients without failure.

The APTM100UM60FAG has a maximum drain-source voltage of 60 volts, making it suitable for applications that require higher power handling. It also has a very low on-state resistance, which helps to reduce the power dissipation in the device. The MOSFET also has very low turn-on and turn-off times, allowing for faster switching speeds.

Overall, the APTM100UM60FAG MOSFET is an ideal choice for applications that require power conversion and control. Due to its efficient operation and wide range of applications, the MOSFET is a popular choice for designers and engineers looking to maximize power conversion efficiency. As a result, the APTM100UM60FAG MOSFET is a smart choice for designers and engineers looking to maximize power conversion efficiency, while maintaining excellent reliability.

The specific data is subject to PDF, and the above content is for reference

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