APTM20UM04SAG

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APTM20UM04SAG is a type of power MOSFET developed by Panasonic. It is a single gate self-aligned gate transistor (FET) designed to provide superior performance in both low-power and high-power applications. The device is suitable for high-speed switching, high-frequency switching and high-temperature applications.

The APTM20UM04SAG is a P channel MOSFET with a drain current of up to 25 amperes at a drain-source voltage of 25V. The device has a maximum power dissipation of 40W and a maximum drain-source breakdown voltage of -65V. The MOSFET has a maximum operating temperature of 150C. The device is available in a compact TO-220 package with a drain-source configuration.

The APTM20UM04SAG has an advanced gate process technology which allows for lower gate capacitance, enabling faster switching speeds. The device also has an ultra-low gate charge which reduces gate drive requirements and power losses.

The APTM20UM04SAG is designed to provide high power efficiency and speed. It features a low gate-source voltage to reduce switching losses, which makes it suitable for high-power applications. The device also has an on-resistance of only 3.0 ohms which allows for improved power conversion efficiency. The device has an instant-on switching time of less than 10ns, which makes it suitable for high-speed switching applications.

The APTM20UM04SAG is designed to provide reliable operation in harsh environments. The device has an operating temperature range of -55C to 150C and is capable of withstanding up to 100V of reverse bias. The device is made with superior process technology which ensures superior yield and reliable operation even in extreme temperatures.

The APTM20UM04SAG is a P-Channel MOSFET that offers low on-state resistance, fast Switching times, and superior power dissipation. Its superior design and construction offer superior performance, making it ideal for use in applications such as high-speed switching, high-frequency switching, automotive, and power management.

Overall, the APTM20UM04SAG is a single gate self-aligned gate FET designed to provide superior performance in both low and high-power applications. Its advanced gate process technology provides low gate capacitance, low gate-source voltage, and low on-state resistance. Combined with its fast switching times, rugged design, and high temperature operation, the APTM20UM04SAG is an ideal solution for applications requiring high performance in harsh environments.

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