BUK6207-30C,118 Discrete Semiconductor Products

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The BUK6207-30C,118 is a single N channel enhancement mode silicon gate field effect transistor. This type of field effect transistor is most commonly used in basic linear applications.

The device consists of an N-type source, an N-type drain, and an insulated gate. When a gate-to-source voltage is applied, electrons flow from the source to the drain and create a conducting channel between them. This conducting channel is known as an inversion layer.

The BUK6207-30C,118 has an on-state resistance (RDS) of 45Ω, a threshold voltage of 2.0V, and a breakdown voltage of 30V. The low on-state resistance (RDS) allows for efficient power dissipation and operation at higher currents.

The BUK6207-30C,118 is ideal for use in switching applications such as power supplies, motor controllers, and industrial control systems. It can also be used in signal processing applications such as signal conditioning, filtering, and amplification.

The BUK6207-30C,118 is often used along with other components such as temperature and pressure sensors to create complex control systems. It can be used to accurately control the pressure or temperature of a system based on user input.

The BUK6207-30C,118 is a reliable and versatile device that can be used in a wide range of applications. It is an ideal choice for many applications where an efficient, reliable and cost-effective solution is required.

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