BUK6208-40C,118 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.8V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	128W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3720pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	67nC @ 10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	6.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The BUK6208-40C,118 is a high power FET which is ideal for use in a wide range of applications. The FET is a single Mosfet with a voltage rating of 200V and a drain-source current of up to 8A. It is suitable for handle up to 8A of continuous drain current and can withstand up to 10A of peak current. The FET also features an on resistance of 0.19ohms. The BUK6208-40C,118 FET is a commonly used power transistor which can be used in high power and audio applications. It is most commonly used in the power amplifiers, power supply circuits, and audio amplifiers. The FET offers excellent switching performance, with a fast switching speed, low gate-source capacitance, and low gate-drain capacitance. This makes it suitable for use in high-speed switching circuits. The BUK6208-40C,118 FET also offers good thermal performance, with a maximum junction-to-ambient thermal resistance of 40 degrees Celsius/W. Its low thermal resistance, accompanied by its high power handling capacity, makes the FET suitable for use in power amplifier, power supply, and audio amplifier circuits which require high power dissipation and low thermal resistance. The BUK6208-40C,118 transistor offers good protection from electrostatic discharge (ESD). It is rated for 8kV ESD protection in the drain-source, drain-gate and source-gate directions. This ensures that the FET is well protected from any ESD damage and therefore can be used in applications which require such protection. The BUK6208-40C,118 FET has a maximum operating temperature range of between - 55 °C and 150 °C. This wide temperature range allows for a wide range of applications, from automotive to military applications. The BUK6208-40C,118 also offers good power efficiency, with an efficiency of up to 93% at a voltage of 200V and a current of 8A. This makes the FET suitable for use in high-power and audio applications, where power efficiency is essential. The BUK6208-40C,118 FET works on the principle of operation of a Field Effect Transistor (FET). A FET is a semiconductor device which is composed of p-type and n-type semiconductor material. The transistor operates by controlling the current flow between the source and drain electrodes by controlling a gate voltage applied to the gate electrode. The FET is a voltage controlled device and has its gate terminal used to control the current flow between drain and source terminals employing the ‘MOS’ (metal oxide semiconductor) capacitor. The source and gate electrodes are insulated from each other using an oxide barrier and the gate voltage is used to manipulate the polarization of the oxide barrier and thus regulate the current flow between the gate and drain. The BUK6208-40C,118 is designed for use in a variety of applications. It is an excellent choice for use in high-power and audio applications, due to its high power handling capacity, good power efficiency and wide operating temperature range. It is also suitable for use in applications which require protection against electrostatic discharge.

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