BUK6217-55C,118 Allicdata Electronics
Allicdata Part #:

1727-5508-2-ND

Manufacturer Part#:

BUK6217-55C,118

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 44A DPAK
More Detail: N-Channel 55V 44A (Tc) 80W (Tc) Surface Mount DPAK
DataSheet: BUK6217-55C,118 datasheetBUK6217-55C,118 Datasheet/PDF
Quantity: 10000
2500 +: $ 0.23584
Stock 10000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 19 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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A BUK6217-55C,118 is a field effect transistor (FET) related to the Metal Oxide Silicon Field Effect Transistor (MOSFET), more specifically to the single type. FETs and MOSFETs are electricity-controlled semiconductors devices similar to other transistors. They usually carry fewer electrons than a bipolar transistor or bipolar junction transistor and they are less costly, making them ideal for numerous electronic applications such as amplifying, switching and noise reduction. Single MOSFETs like BUK6217-55C provide advantages such as lower heat dissipation, high operating temperature range and higher gain figure.In essence, the BUK6217-55C works on the principle of voltage-controlled gate current. It operates by providing a gate voltage to a gate electrode (input window) in order to control the flow of current from the drain to the source terminal. The source terminal is connected to the power supply, while the drain terminal is connected to the load.The BUK6217-55C differs from most other single MOSFETs because it has a built-in vertical P-channel MOSFET that is suitable for high voltage and high temperature applications. This model is widely used in linear power supplies and voltage regulator modules due to its high current and voltage ratings.Due to its high power and high reliability, the BUK6217-55C is used in a wide variety of applications, including medical equipment, computing, industrial applications, automotive devices, power supply management systems and mobile devices. One of the most common uses of BUK6217-55C is in high-power DC-DC converters.The BUK6217-55C includes an internal back gate-drive circuit that is useful for supplying the necessary voltage for the drain current to act as the signal source. The built-in diode bridge allows for a low standby current, eliminating the need for an external signal source.In addition to its various applications, the BUK6217-55C also has an ultra-high-performance rating, which is achieved by using advanced processing technologies. This model is designed to eliminate thermal runaway, which can occur due to prolonged periods of low-voltage operation or high voltage-transitions.Overall, the BUK6217-55C is an extremely powerful single MOSFET with numerous applications. Its key features make it suitable for a wide range of projects, including high-power linear power supplies and voltage regulator modules, medical equipment, industrial applications, automotive systems, power supply management systems and mobile devices. The integrated back gate-drive circuit and built-in diode bridge make it an ideal choice for most applications requiring high voltage and current ratings.

The specific data is subject to PDF, and the above content is for reference

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