BUK6D120-60PX Discrete Semiconductor Products

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The BUK6D120-60PX is a single discrete MOSFET (metal-oxide field-effect transistor) capable of handling up to 60-amperes of current, featuring a low on-resistance of just 10.20 milliohms and an RDS(ON) excellent characterizing feature of 25.4A maximum drain current. Suitable for use in a wide range of applications where the load requires up to 60 amperes of current, such as DC-DC converter applications and battery management systems, the BUK6D120-60PX provides comprehensive protection against over-temperature, over-voltage and over-current.

The BUK6D120-60PX MOSFET uses a high-power, very low-on-resistance structure to provide superior performance when high current loads must be switched on and off frequently. Having a total gate charge of just 13.8 nC and a total gate charge of 17.6 nC, this MOSFET is capable of switching very quickly without sacrificing efficiency or power loss, making it ideal for applications where power is a critical parameter and fast switching is required.

The BUK6D120-60PX is suitable for use in a variety of different application fields, including computer servers and server systems, automotive power management systems, LED lighting, solar power inverters, motor control systems, and high-current applications such as power supplies, motor drivers and robotics. The wide range of features and excellent construction lead to an optimal balance of performance, cost, and reliability when used in these various applications.

The principle of operation of the BUK6D120-60PX MOSFET is similar to that of the most basic types of transistor. Upon application of a voltage to the gate, a conductive channel is created in the channel area of the MOSFET between two “source” and “drain” terminals. The channel increases in resistance when the voltage applied to the gate is reduced, allowing the current flow to be controlled through the channel to the drain by varying the applied voltage. In the BUK6D120-60PX, this is done with a low-on resistance construction that allows for efficient and fast switching of current, with minimal power loss.

The BUK6D120-60PX MOSFET is also designed to protect against common overcurrent and overvoltage faults. Overcurrent protection is provided by a "current limitation feature" that limits excess drain current and quickly restores the device to its normal operating condition. Overvoltage protection is provided by a "back-bias protection circuit" that prevents excessive drain voltage from damaging the internal structure of the MOSFET.

Overall, the BUK6D120-60PX MOSFET is an excellent choice for applications that require fast switching and high current handling capabilities. With its excellent characteristics, low on-resistance, and reliable protection features, the device is well-suited to a wide range of applications.

This article demonstrated the features, applications and operating principle of the BUK6D120-60PX MOSFET. As a low-on-resistance device with comprehensive over-current, overvoltage and temperature protection features, the BUK6D120-60PX makes an excellent choice for applications such as DC-DC converters, power supplies, motor drivers, and LED lighting.

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