BUK6240-75C,118 Discrete Semiconductor Products |
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| Allicdata Part #: | 568-6990-2-ND |
| Manufacturer Part#: |
BUK6240-75C,118 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 75V 22A DPAK |
| More Detail: | N-Channel 75V 22A (Tc) 60W (Tc) Surface Mount DPAK |
| DataSheet: |  BUK6240-75C,118 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 21.4nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 46 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK6240-75C,118 is a type of field-effect transistor (FET). This type of transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three terminals called source, gate, and drain. The source and drain carry the current while the gate is used to control the current flow.A FET works by using a voltage input to the gate to control the flow of current between the source and the drain. This ability to control the current flow using only a small amount of voltage makes the FET the ideal choice for a wide variety of applications, such as switching or amplifying signals or controlling current in various circuits.BUK6240-75C,118 is a single-gate MOSFET, or metal-oxide-semiconductor FET. This type of FET is composed of a single layer of silicon on top of a layer of metal oxide. The silicon layer is used as the gate and the metal oxide layer is used as the insulating layer between the gate and the source and drain.Unlike the other types of FETs, the single-gate MOSFETs use a gate-to-source capacitance to control the flow of current between the source and the drain. This means that the gate voltage must be changed to alter the capacitance, which alters the current flow. The gate voltage is usually kept to a low level in order to minimize the power consumption of the device.Because of its low power consumption and its ability to control current flow with only a minimal amount of voltage, the BUK6240-75C,118 is perfect for a wide range of applications. These include power management and protection in low-voltage power systems, switching and amplification in audio and video equipment, and communications control and signal isolation in industrial, aerospace, and medical equipment.The BUK6240-75C,118 also has a fast switching time, which enables it to react quickly to changing conditions. This makes it ideal for use in high-performance systems, where responsiveness is critical. It also makes it ideal for applications such as power management and protection, where it must be able to react quickly to changes in the current flow.In conclusion, the BUK6240-75C,118 is an ideal choice for a wide variety of applications due to its low power consumption and its ability to control current flow using only a minimal amount of voltage. Its fast switching time also makes it well-suited for use in high-performance systems, and its ability to quickly react to changes in current makes it perfect for applications such as power management and protection.
The specific data is subject to PDF, and the above content is for reference
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