BUK652R0-30C,127

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The BUK652R0-30C,127 is a high-performance N-channel enhancement mode power MOSFET transistor. It boasts a drain current (ID) of 150 A at 25 °C, and a continuously-drain source voltage (VDS) of 30 V. This advanced transistor offers an excellent combination of fast switching performance and low on-resistance. As such, it is suitable for a wide range of applications, from telecommunications, consumer electronics, and motor control, to motor drives and power management.

In its simplest form, a MOSFET transistor is an active transistor composed of an insulated gate, an n-type drain (NDR), and a p-type source (P-SRC). The insulated gate is connected to the control electrode, which is used to control the operation of the circuit. When a voltage is applied across the gate, electrons are attracted from the NDR towards the P-SRC, and holes are released from the SRC, creating a flow of current. Therefore, by controlling the gate voltage, the current through the transistor can be regulated, allowing it to be used as a switch in a variety of devices.

The BUK652R0-30C,127 is designed for use in a wide variety of applications. In telecommunications, it can be used to provide rapid switching capabilities in base transceiver stations, allowing for efficient data transfer. In consumer electronics, it can be used to regulate power supply without a perceptible load. In motor control, it can be used to control the speed and torque of motors, and in motor drives, it can be used to control the efficiency and output of the motor. Moreover, the BUK652R0-30C,127 can also be used in power management, enabling the user to reduce power consumption and increase the efficiency of the system.

The BUK652R0-30C,127 is a robust and reliable power MOSFET transistor, which offers excellent performance in a wide range of applications. Its simple working principle and advanced features make it an ideal choice for telecom, consumer electronics, motor control, motor drive, and power management applications.

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