Allicdata Part #: | 568-7492-5-ND |
Manufacturer Part#: |
BUK652R3-40C,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 120A TO220AB |
More Detail: | N-Channel 40V 120A (Tc) 306W (Tc) Through Hole TO-... |
DataSheet: | BUK652R3-40C,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 15100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 306W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK652R3-40C,127 is a single n-channel TrenchMOS transistor. It is part of the power MOSFET family and it is made with a new process which yields significantly improved features with the same outline. This component offers an increased ruggedness, a lower on-state resistance and improved gate charge performance, compared to the previous versions.
The BUK652R3-40C,127 is designed for use in applications such as automotive, power management, lighting and display systems. This component is used to control large currents, voltage, and power in various DC circuits, including power inverters and AC/DC converters. Its main applications include signal and power switching, current source switching and signal conditioners.
The main principle of operation of the BUK652R3-40C,127 is that it is an n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Its source, gate, and drain terminals are all connected to the same substrate, which is typically made out of silicon. When a voltage applied to the gate terminal is high enough, it causes an electric field to form in the MOSFET-channel, thereby allowing current to flow from the drain to the source terminals.
This electric field is typically provided by a voltage source which is connected to the gate terminal. Once the electric field is formed, the channel acts as a resistor, controlling the current flow from the drain to the source. This type of transistor is very useful in power management and switching applications as it is able to control high voltage or current flows with just a small voltage or current control signal.
The BUK652R3-40C,127 is designed to offer increased ruggedness, lower on-state resistance and improved gate charge performance. It also features reduced switching and conduction losses, improved efficiency and thermal management and improved system reliability. This component is also optimized for high frequency applications, making it suitable for use in switching and power supply applications.
Overall, the BUK652R3-40C,127 is a single n-channel TrenchMOS transistor that is designed for use in various applications such as automotive, power management, lighting and display systems. It is made with a new process that allows it to offer improved features with the same outline. This component is used to control large currents, voltage, and power in DC circuits, including power inverters and AC/DC converters and it is also optimized for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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