| Allicdata Part #: | BUK9107-55ATE,118-ND |
| Manufacturer Part#: |
BUK9107-55ATE,118 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 75A D2PAK |
| More Detail: | N-Channel 55V 75A (Tc) 272W (Tc) Surface Mount SOT... |
| DataSheet: |  BUK9107-55ATE,118 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
| Supplier Device Package: | SOT-426 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 272W (Tc) |
| FET Feature: | Temperature Sensing Diode |
| Input Capacitance (Ciss) (Max) @ Vds: | 5836pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK9107-55ATE is a single field-effect transistor (FET) that is widely used in many applications. It is a N-channel enhancement-mode insulated-gate FET (IGFET) manufactured by a semiconductor company. This device is designed for use in high-power applications and features a high-current rating, wide operating temperature range, and high-speed switching. It is an excellent choice for use in power control and driving circuits for automobiles, power supplies, and industrial systems.The BUK9107-55ATE is made from a high-grade, GaAs-based material with a drain-source breakdown voltage of 175 V and a maximum drain current of 220 A. It is composed of a four-terminal metal oxide semiconductor (MOS) FET, which contains two source terminals and two drain terminals that are isolated from each other. The source and drain terminals are connected to the metal gate of the FET, which is exposed to an electric field.The key feature of the BUK9107-55ATE is its high-speed switching capability. It is capable of switching between two states in as little as 5 nanoseconds, making it ideal for high-speed applications such as motor control. Additionally, its high-voltage rating and low RDS(ON) resistance allow it to handle higher currents than conventional FETs.The BUK9107-55ATE is used in a variety of applications, including power control, motor control, automotive systems, and industrial systems. In power control applications, the transistor is used to switch between two power states in order to provide a regulated voltage or current. It can also be used in motor control applications to switch between different speed settings or to regulate the speed of the motor. In automotive systems, the transistor is used for applications such as electronic ignition and other fuel-injection systems. Additionally, it is used in industrial systems for applications such as high-power switching and power regulation.The working principle of the BUK9107-55ATE is based on the MOSFET design. The gate terminal of the transistor is connected to an electric field, which is used to control the flow of current through the transistor. When a voltage is applied to the gate terminal, the gate becomes electrically charged, which allows current to flow through the transistor. When the voltage is removed, the gate returns to its non-charged state and current flow ceases. The gate voltage, drain current, and drain-source voltage are all used to control the amount of current flowing through the transistor.The BUK9107-55ATE is a versatile and reliable single FET. Its wide operating temperature range and high-current rating make it ideal for use in a variety of applications. Additionally, its high-speed switching capability makes it perfect for applications that require fast switching, such as motor control circuits. With these features, the transistor is an excellent choice for use in power control and driving applications for automobiles, power supplies, and industrial systems.
The specific data is subject to PDF, and the above content is for reference
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