BUK9209-40B,118 Allicdata Electronics
Allicdata Part #:

1727-5257-2-ND

Manufacturer Part#:

BUK9209-40B,118

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A DPAK
More Detail: N-Channel 40V 75A (Tc) 167W (Tc) Surface Mount DPA...
DataSheet: BUK9209-40B,118 datasheetBUK9209-40B,118 Datasheet/PDF
Quantity: 15000
2500 +: $ 0.32305
Stock 15000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Power Dissipation (Max): 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3619pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK9209-40B,118 is a type of single-channel, enhanced N-channel field effect transistor (FET) used in power MOSFET and low-side driver studies. This type of transistor is commonly used for switch on/off, voltage regulation, and power switching. This type of FET has an improved electrical performance and offers better reliability.

In a BUK9209-40B,118 the channel is constructed with the source, drain, and gate electrodes physically connected to a semiconductor material. The source and drain are provided with positive and negative imp features while the gate is electrically isolated from the channel. The source and drain also have their respective active regions which are electrically charged positive in one part and negative in the other. The gate controls the current flow through the channel by manipulating the charge of the active regions. The higher the gate voltage, the more current flows through the device. In order for the FET to work properly, the gate voltage must be set to the appropriate amount.

The BUK9209-40B,118 FET is mainly used in power amplification, motor control and other motor control related applications. This type of FET can be used to build power MOSFETs for switching on/off and controlling motors. In power MOSFETs, the FET can be used to regulate the input voltage or to control the output voltage. The FET provides high speed switching and has low on-state resistance.

The BUK9209-40B,118 FET is also used in low side drivers. This type of FET can provide low-side drive in both discrete and integrated form. The FET can also be used in an incremental drive to provide the proper voltage and current regulation at low-side of the system. The FET can be used to prevent the over-voltage and over-current condition at the low-side of the system.

The BUK9209-40B,118 FET is also used in various switching circuits. In these types of circuits, it can be used as a switch or a control element to switch the current or voltage from one point to another. This type of FET can also be used as a low-frequency amplifier for regulated voltage supply. The FETs can be used for pulse-width modulation or pulse-code modulation for regulating the current in the system.

The BUK9209-40B,118 FET has many advantages compared to its traditional counterparts. It has enhanced electrical performance, low cost, and improved reliability. It also offers higher-frequency operation and high current handling capacity. The use of the FET in power MOSFETs, motor control and other motor control related applications has allowed engineers and designers to create efficient systems that require less effort to operate and can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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