BUK954R4-40B,127

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	254W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7124pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	64nC @ 5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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BUK954R4-40B,127 is a type of Transistor FETs (Field-Effect Transistor) and more specifically MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It belongs to the single type due to the presence of only one channel of conduction in these transistors. The BUK954R4-40B,127 is useful as an electronic switch due to its high input impedance, fast switching speed and low gate current.The FETs and more specifically MOSFETs are found in almost all electronic systems from basic circuits to computer systems. In either case, their function is the same; they are used as electronic switches, allowing or stopping the flow of electrons of an electrical circuit. In essence there are two types of FETs; they are the Junction Field Effect Transistors (JFETs) and the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). JFETs are characterised by the n-channel and the p-channel MOSFETs and each type has its own characteristics and applications. A MOSFET is primarily composed of four regions or layers of semiconductor material that are sandwiched together; they are referred to as the source, the drain, the gate and the substrate. These layers are referred to as terminals and each has a distinct function in the operation of the transistor. The source is connected to a terminal that supplies electrons to the transistor and is often a negative voltage source. The drain is connected to a terminal that absorbs the flux of electrons from the transistor, usually a positive voltage source. The gate is connected to a terminal that controls whether or not electrons are allowed to pass through the transistor and is typically a voltage source. Finally, the substrate or body is connected to a terminal that controls the voltage between the drain and the source while providing biasing of the transistor.The BUK954R4-40B-127 MOSFET is a single-channel device and is designed to switch low-power DC and AC signals. It has a small form factor and is rated for a maximum drain current of 40A and a maximum drain-source voltage of 600V. It is typically used in DC to AC converter circuits, motor speed controllers, low voltage power supplies and as buffers for high-voltage signals.The working principle of the BUK954R4-40B-127 MOSFET is based on the principle of applied voltage being used to allow or prevent the flow of electrons between the source and the gate terminals. When a positive voltage is applied to the gate terminal, electrons are attracted to the gate electrode, thus making it possible for the electrons to flow easily between the source and the drain electrodes. This process is known as the “channel modulation” and it is the basis of operation of the FET transistor. When the voltage to the gate is reversed, the flow of electrons is reversed. The reverse action of the MOSFET transistor may be used to “turn off” the flow of current between the source and the drain terminals.In summary, the BUK954R4-40B-127 MOSFET is a single-channel device that is used as an electronic switch. It has a small form factor and is typically used to control DC and AC signals in various power electronics circuits. Its working principle is based on the channel modulation phenomenon that is enabled by applying a positive voltage to the gate terminal.

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