BUK9628-55A,118 Allicdata Electronics

BUK9628-55A,118 Discrete Semiconductor Products

Allicdata Part #:

1727-7195-2-ND

Manufacturer Part#:

BUK9628-55A,118

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 42A D2PAK
More Detail: N-Channel 55V 42A (Tc) 99W (Tc) Surface Mount D2PA...
DataSheet: BUK9628-55A,118 datasheetBUK9628-55A,118 Datasheet/PDF
Quantity: 1000
800 +: $ 0.31522
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 99W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK9628-55A,118 is a state-of-the-art single N-channel MOSFET which is supporting medium-voltage (55V maximum) applications in fast switching applications. This MOSFET is using a technology that has low on-resistance and excellent avalanche Ruggedness features. It’s designed to offer an optimal combination of fast switching performance, low on-gate resistance and low gate-charge, giving it an excellent operation performance over the wide range of temperatures.

Applications

BUK9628-55A,118 is ideally used in several applications including:

  • Power switches for consumer electronic products
  • Power switches for automotive
  • High speed switching applications
  • AC/DC switching
  • Lighting applications
  • DC/DC converters
  • Switching mode power supplies
  • Uninterruptible power supplies.

Working Principle

As mentioned above, BUK9628-55A,118 is a single N-channel MOSFET, which is using a technology that has low on-resistance and excellent avalanche Ruggedness features. It features a vertical N-channel construction and its working mechanism is quite simple.

When the MOSFET’s gate voltage is below the threshold voltage, the MOSFET is off and its saturation region will not appear. But when the gate voltage rises above the threshold voltage, the MOSFET will be turned on and the drain current will increase gradually. This happens because the electrons are attracted to the surface of the MOSFET’s gate from the substrate. As a result, the electrons will pull the impact surface electric field away from the substrate, increasing the electron density on the drain-source channel and thus allowing current to pass through it.

This MOSFET also features a low on-resistance and high avalanche Ruggedness feature. This is achieved by using an oxidized silicon substrate and a thin gate insulation layer. This reduces the surface electric field and thus provides the MOSFET with a higher voltage capability and improved conduction capability. The MOSFET also features a high-frequency response and features a planar construction, which allows it to achieve higher ON-resistance which enables it to handle higher load currents.

BUK9628-55A,118 MOSFET also features a wide range of features like low gate charge, high-frequency response and excellent thermal conductivity, making it ideal for use in various high-speed switching applications. These features can help in reducing power losses and improving power efficiency.

Overall, BUK9628-55A,118 is an excellent single N-channel MOSFET which offers users several advantages like low on-resistance, excellent avalanche ruggedness and good switching performance. The wide range of features offered by this MOSFET make it an ideal choice for various applications. It is definitely an ideal choice for those who are looking for an excellent MOSFET for their applications.

The specific data is subject to PDF, and the above content is for reference

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