BUK962R6-40E,118 Discrete Semiconductor Products

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BUK962R6-40E,118 Application Field and Working Principle

The BUK962R6-40E,118 is a N-Channel MOSFET that is specially designed for use in high voltage switches and voltage regulators. The device is composed of two main parts, a gate and a channel. The channel is composed of three layers: an N channel, a channel region, and a source region. The source region is designed to be the voltage source providing the voltage source control signal to the gate while the channel region acts as the main current conduction path between source and drain.

The source region and the channel are held at two separate voltages, allowing the MOSFET to perform its switching and regulation functions. The voltage on the source region determines the threshold voltage at which it can switch between the two polarizations, while the drain voltage determines the levels of current conduction.

When the gate is positively energized, an electric field will develop between the gate and the channel, allowing electrons to flow from the source region to the drain. This is known as the "inversion" process, wherein current is transferred from the source to the drain. When the gate is negatively energized, the electric field reverses, causing the electrons to flow from the drain to the source, in a process known as "depletion".

Due to the fact that the BUK962R6-40E,118 has a wide threshold voltage range, it is used in a variety of applications in the industrial, automotive, and consumer electronics markets. These applications include power factor correction, DC-DC converters, DC motor control, and high-voltage power supplies. The device is also used in the construction of high-current power devices such as power MOSFETs, SCRs, IGBTs, and other switching circuits.

The main advantages of using the BUK962R6-40E,118 are its low on-resistance, low gate capacitance, high input impedance, and low power dissipation. The device has a high switching frequency and can handle high-voltage and high-current applications. The device has a high thermal stability and is capable of operating over a wide range of temperature levels.

The BUK962R6-40E,118 has physical dimensions of a 9mm x 2mm flat-pack, and is available with an integrated Pb-free package. The device has an ultra-low threshold voltage range of 0V to 15V and can handle up to 20A of continuous drain current, which makes it ideal for high-voltage and high-current applications.

In summary, the BUK962R6-40E,118 is a N-Channel MOSFET designed for use in high voltage switches and voltage regulators. Due to its low on-resistance, high input impedance, and low power dissipation, it can be used in a variety of applications in the industrial, automotive, and consumer electronics markets. The device is available with an integrated Pb-free package, and has physical dimensions of a 9mm x 2mm flat-pack, and has an ultra-low threshold voltage range of 0V to 15V.

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