BUK964R2-55B,118 Discrete Semiconductor Products

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The BUK964R2-55B,118 is part of a series of Field Effect Transistors (FETs). It is a single MOSFET with a drain current rating of 2A, a breakdown voltage of 55V and an on-state resistance of 118mW.

MOSFETs, or metal-oxide-semiconductor field-effect transistors, operate by using electric fields to control the conductivity of a semiconductor. Their working principle is based on the abundance of mobile charge carriers in a MOSFET channel, which acts as a resistor. When a voltage is applied to the gate, electric fields are created, allowing current to pass through the channel and resulting in conduction.

The BUK964R2-55B,118 is a widely-used FET, applicable in a variety of fields, such as power conversion and switching, motor control, and audio amplification. Its high-drain current rating and breakdown voltage of 55V make it ideal for power switching applications. For example, it can be used in motor controllers, DC-DC converters, switched mode power supplies, and high-power amplifiers. In addition, its low on-state resistance allows it to operate at higher frequencies, making it suitable for audio amplification.

Overall, the BUK964R2-55B,118 FET is an excellent choice for high-voltage, high-current applications, as well as audio amplification. Its low on-state resistance and high-drain current rating make it ideal for many power and audio applications, making it a great choice for designers.

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