BUK969R3-100E,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1064-2-ND |
Manufacturer Part#: |
BUK969R3-100E,118 |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 100A D2PAK |
More Detail: | N-Channel 100V 100A (Tc) 263W (Tc) Surface Mount D... |
DataSheet: | BUK969R3-100E,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.61409 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 263W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11650pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 94.3nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK969R3-100E is a single N-channel PowerTrench MOSFET which is specifically designed to minimize the on-state resistance (RDS (on)) and yet maintain excellent switching performance with low gate charge (Qg) and low gate-to-drain leakage (Qgd). As a result, it is ideal for load switch and DC-DC converter applications.
BUK969R3-100E has a wide range of applications, including DC-DC conversion, battery-powered devices, lighting, motors and chargers. It is also suitable for use in portable electronic products such as personal digital assistants, mobile phones, digital cameras, LCD monitors, printers, set-top boxes and DVD players.
BUK969R3-100E is a metal oxide semiconductor field-effect transistor (MOSFET). It is made up of three terminals – the gate, drain and source. The gate acts as an electrically switchable connection between the drain and the source. When voltage is applied at the gate, conduction will occur between the drain and the source. This is known as the ‘on’ state. When the voltage is removed, no conduction will take place and this is known as the ‘off’ state. The MOSFET can therefore be used to amplify, switch, and regulate electrical signals.
The BUK969R3-100E MOSFET is designed specifically for high current DC-DC conversion and load switch applications. It features a wide operating temperature range from -55°C to 175°C, which allows it to be used in a wide range of demanding applications. Furthermore, its fast switching times (tON, tOFF) and low on-resistance (RDS (on)) ensure that it performs optimally even under extreme conditions. It also offers excellent reliability and resistance to short circuiting and inductive loads.
In summary, BUK969R3-100E is an innovative MOSFET that is specifically designed to meet the needs of high performance, high reliability DC-DC conversion and load switch applications. Its advanced design ensures that the device is capable of operating at the highest levels of efficiency,reliability and performance even under the most demanding conditions. This makes it the ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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