BUK9E06-55B,127

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The BUK9E06-55B,127 is a single N-channel enhancement-mode power field-effect transistor (FET). This class of FETs are often called insulated-gate bipolar transistors (IGBTs) because they have the advantages of both FETs and bipolar junction transistors (BJTs). The BUK9E06-55B,127 is mainly used in automotive and industrial applications, such as voltage regulation, switching current and voltage compensation, and power control.

This device is based on the original MOSFET (metal-oxide semiconductor field-effect transistor) technology. It has a floating gate and an insulated gate that controls the amount of voltage and current passing through it. Its operation principle is relatively simple. When the voltage applied across the gate and the source is high enough, it will begin to allow current to pass through. Otherwise, when the voltage is kept low, the channel will remain closed.

The BUK9E06-55B,127 is a vertical structure device, ie it has two terminal gates (drains and sources) at opposite sides of the same layer, rather than being a two-gate planar device. The vertical structure offers several advantages, such as a small on-resistance and a higher power efficiency.

Some of the main features of the BUK9E06-55B,127 are its low gate charge, high blocking voltage capability, and excellent body diode dV/dt rating. These features allow the device to be used in high-voltage, high-current applications. In addition, it also has a low drive voltage and low threshold voltage, making it a good choice for operating in low-voltage, high-current applications. The device has an on-state resistance of 175 milliohms and a maximum drain current of 75 A.

The BUK9E06-55B,127 is suitable for switching electronic loads in automotive and industrial use. It can be used in motor control, voltage regulation, motor speed control, and rectifier bridge switch control. In addition, this device is also used in high-voltage DC/DC converters, power factor correction units, and uninterrupted power supplies.

When designing an application circuit with the BUK9E06-55B,127, designers should consider several important factors. The gate source voltage (VGS) should be kept below the absolute maximum rating. In addition, the gate-drain voltage (VGD) should also be kept below the absolute maximum rating. The gate charge (Qg) should be considered as well, and it should not be exceeded by the operating voltage.

In addition, the maximum drain-source and drain-gate voltages (VDS and VDG) also need to be taken into account. As the drain current and the load current increase, the VDS and VDG will also increase. Thus, these factors should be kept within their specified ranges in order to prevent device failure.

The BUK9E06-55B,127 is a single N-channel enhancement-mode power FET, which offers high performance, low gate charge and high blocking voltage capability. This device is suitable for automotive and industrial applications, such as voltage regulation, motor control, switching current and voltage compensation, and power control. When designing an application circuit with this device, designers should consider several important factors such as VGS, VDG, VDS and Qg. By doing so, designers can ensure the desired performance and reliability of the device.

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