BUK9J0R9-40HX

The BUK9J0R9-40HX is a field effect transistor (FET) specifically a MOSFET (metal oxide semiconductor FET). It is a single type, meaning the chip contains one FET. It has average ratings of -20V and 100A, making it a viable option for a variety of applications from high-power to low-power.

Application Field

This transistor can be used for both high power and low power applications, depending on its state. In high-power applications, it can act as a precision switch, turning on and off power with exact timing. In low-power applications, it can act as an amplifier, helping electrical signals travel farther with less power. Because it is a field effect transistor, it is also capable of amplifying a signal at lower voltage levels, making it suitable for applications that require amplifying lower voltages with more efficient access. Its wide range of power ratings and its ability to be used with a variety of materials makes it a viable option for many applications across multiple industries.

Working Principle

The working principle of the BUK9J0R9-40HX is fairly simple. The MOSFET is a type of field effect transistor. As such, it is composed of a gate, a source, and a drain. The function of the FET is to create an electric field between the gate and the drain. The gate is the control electrode, and is connected to a voltage source. Applying the voltage creates an electric field between the gate and the drain. This creates an area near the gate that can either attract or repel electrons, depending on the voltage applied. The source is connected to a current source, and the drain is connected to a circuit. When the gate voltage is applied, it induces current to flow through the channel, thus completing the circuit and allowing electrical power to flow. This is the basic prequisite of working principle of a MOSFET.