BUK9M11-40EX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK9M11-40EX, also known as a SourceFET™ IPak, is a N-channel enhancement mode power field-effect transistor (FET). This type of FET is commonly used because of its characteristics such as lower on-state resistance, low gate charge, and fast switching characteristics.

The BUK9M11-40EX has a drain-source breakdown voltage (BVDSS) of 40V and a continuous drain current (ID) of 11A. It offers low gate charge (Qg) of 3.2nC and a lowa on-state resistance (RDS(on)) of 0.011ohms would enable high switching frequency and high performance of the device. This makes it suitable for switching and power applications.

The BUK9M11-40EX has several popular applications in a variety of fields. These include power conversion, AC/DC and DC/DC high frequency switch-mode power supplies, DC motors, automotive applications, and consumer electronics. This type of FET is also suitable for circuit designs containing high-performance amplifiers, and gate driver circuits, where high switching speed and low parasitic capacitance are required.

Working Principle

The BUK9M11-40EX is a type of power FET that consists of three P-N junctions as shown in the diagram. The two source-drain junctions are sandwiched between the bulk, which forms the body, and the gate. The gate acts as an electrode for controlling the flow of current in the FET.

When the voltage applied to the gate is low, the majority carriers (electrons) in the channel around the source-drain junctions are attracted to the gate, thereby forming the N-type conductive channel. This configuration allows for a continuous flow of current from the source to the drain, making the FET in its “on-state”. When the voltage applied to the gate is increased, the majority carriers are repelled from the gate, thereby de-activating the N-type conductive channel and turning off the FET.

The BUK9M11-40EX is designed to work on a particular operating voltage range, known as the established voltage (VES). This is a measure of the effectiveness of the FET, based on the maximum voltage that can be applied to the FET without causing permanent damage to the device.

The BUK9M11-40EX exhibits a very low gate leakage, resulting in minimal power dissipation. Furthermore, it operates with a low gate threshold voltage, making it suitable for various types of logic level applications.

The BUK9M11-40EX is capable of providing a high level of protection against gate-source shorts, electrostatic discharge and dielectric breakdown. It is also capable of providing protection against over-voltage and over-current conditions.

The BUK9M11-40EX is a robust and versatile power FET that can be employed in a variety of applications. Its low gate charge, low on-state resistance, fast switching characteristics, and protection features make it suitable for high-performance circuit designs.

The specific data is subject to PDF, and the above content is for reference