BUK9Y8R5-80EX

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TheBUK9Y8R5-80EX is a single N-channel trenchMOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is widely used in many applications, primarily in power conversion and power management. This FET is designed to have low on-resistance, low input capacitance, and low gate charge. This makes it an ideal solution for applications such as DC/DC converters, power supplies, switching power supplies, and motor control.

The BUK9Y8R5-80EX is a high voltage N-channel MOSFET with a maximum drain-to-source rated voltage of 80V and maximum drain current (Id) of 9A. The device is rated for a drain-source cutoff current (Idss) of 300uA. It also has a total gate charge (Qg) of 25.5nC and gate-to-source leakage current (Igss) of 200nA.

The working principle of the BUK9Y8R5-80EX is quite simple. When a voltage is applied to the gate terminal, it creates an electric field within the MOS channel which modulates the channel resistance. This modulated resistance allows for controlled current flow between the drain and source. The amount of current that can flow between the terminals is dependent on the gate voltage applied and the amount of channel resistance. The less voltage that is applied to the gate, the less resistance there is in the channel, allowing more current to flow.

The BUK9Y8R5-80EX has a wide range of uses in many applications. It is primarily used in power conversion and power management applications. It can be used in DC-DC converters, power supplies, motor control, and voltage regulators. It is also widely used in the heat sink of communication and monitoring systems, motor control, and home appliances.

In summary, the BUK9Y8R5-80EX is a single N-channel trench MOSFET. It is widely used in many applications, primarily in power conversion and power management applications. The working principle of this MOSFET is simple. When a voltage is applied to the gate terminal, it creates an electric field within the MOS channel which modulates the channel resistance, enabling controlled current flow between the drain and source. This FET is ideal for applications such as DC/DC converters, power supplies, switching power supplies, and motor control.

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