Allicdata Part #: | 1727-1855-2-ND |
Manufacturer Part#: |
BUK9Y19-100E,115 |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 56A LFPAK |
More Detail: | N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LF... |
DataSheet: | BUK9Y19-100E,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.32625 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5085pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A BUK9Y19-100E,115 is a single FET transistor, or field effect transistor, part of a class of semiconductor components which act as switches and amplifiers. The BUK9Y19-100E,115 operates by controlling both the flow of electrical current between two electrodes, and the flow of electrons between the various cells in a circuit, the features of which allow it to be used in a number of applications. Because of their simple construction and versatility, FETs have become the most popular type of transistor.
Principle of Operation
The FET\'s operation uses an insulated gate to control the flow of electrical current between the two electrodes. When a voltage is applied to the gate, an electric field is created which controls the current flow through the channel between the source and drain. This call is regulated by the amount of current passing through the gate, which can be changed by adjusting the voltage applied to the gate.
The BUK9Y19-100E,115 is a single FET transistor, meaning it is composed of one active region of semiconductor material. The active region between the source and drain of the FET is typically constructed from either silicon or gallium arsenide, though other materials can also be used. The FET can be constructed with either n-type or p-type material.
Application Fields
The BUK9Y19-100E,115 has a wide range of possible applications, making it a versatile component in a wide variety of systems. FET transistors are often used in audio amplifier systems, as they are able to accurately control the flow of electrical current under varying conditions. They can also be used in power management systems, controlling the flow of current in circuits which require large amounts of power.
FETs are commonly used in switch mode power supplies, which use the FET to actively switch the power between two inputs. This allows the switch mode power supplies to be more efficient, as they can quickly switch between different voltages or frequencies, automatically adjusting to provide the correct output power. FETs are also used in a range of control systems, as their high-speed gate-to-drain switching allows them to quickly change the flow of electrical current in order to accurately control the system.
The BUK9Y19-100E,115 is also commonly used in digital logic and communication systems. The FET is able to effectively regulate the flow of electrical current through the gates of these systems, allowing the data to be accurately communicated and processed in systems such as computers and mobile phones. FETs are also used in a wide range of medical imaging systems, such as MRI scanners and X-ray imaging systems.
Conclusion
The BUK9Y19-100E,115 is a single FET transistor that has a wide range of possible applications, making it an essential component in a range of power, audio and communication systems. The FET\'s operation is based on an insulated gate between two electrodes, which is able to control the flow of electrical current and electrons. The FET can be constructed from either silicon or gallium arsenide, and is able to effectively regulate the flow of electrical current in both analog and digital systems.
The specific data is subject to PDF, and the above content is for reference
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