Allicdata Part #: | BUK9Y1R9-40HX-ND |
Manufacturer Part#: |
BUK9Y1R9-40HX |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BUK9Y1R9-40H/SOT669/LFPAK |
More Detail: | |
DataSheet: | BUK9Y1R9-40HX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.48686 |
Series: | -- |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The BUK9Y1R9-40HX is a part of the industry-standard field effect transistors that are used in wide range of applications. Its high power capabilities and low power dissipation make it an ideal choice for a variety of systems. This article gives an overview of the applications of the BUK9Y1R9-40HX and explains its working principle.
The BUK9Y1R9-40HX is a single field effect transistor. It hasgate, drain and source pins. There are no internal connections between the drain and the source. The transistor has a breakdown voltage of 40V, making it suitable for applications that require high power devices. The total power dissipation of the device is rated at 8W. The transistor has a maximum drain current capability of 1A.
The BUK9Y1R9-40HX is commonly used in applications that require high current and high power switching. It is commonly used in power supplies, motor control, and digital logic circuits. It is also used in audio systems, computer systems, and other applications. The device is capable of providing fast switching times, which makes it an ideal choice for high frequency signals.
The working principle of the BUK9Y1R9-40HX is based on the enhancement-mode MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). A MOSFET is a type of transistor that controls the flow of current between the drain and source terminals by applying a voltage on its gate. The voltage on the gate can be used to control the flow of current between the drain and source. When the gate voltage is low, the drain current is at its minimum. As the gate voltage increases, the drain current increases accordingly. This is the basic working principle of the BUK9Y1R9-40HX.
In summary, the BUK9Y1R9-40HX is a high power, low power dissipation single field effect transistor that is commonly used in a wide range of applications. Its working principle is based on the enhancement-mode MOSFET. It is capable of providing high current and power capabilities, making it an ideal choice for applications that require fast switching and high frequency signals.
The specific data is subject to PDF, and the above content is for reference
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