BUK9Y29-40E,115

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Introduction to BUK9Y29-40E,115

Application Field and Working Principle

The BUK9Y29-40E,115 is a single field-effect transistor (FET) manufactured by NXP Semiconductors. Field-Effect transistors are widely used for analog and digital switching applications. This makes them an essential device for a variety of different consumer electronics. The BUK9Y29-40E,115 operates using a static field-effect mechanism to switch current on and off, making it ideal for applications that require high performance signal switching. Let\'s take a look at the working mechanism of field-effect transistors and the BUK9Y29-40E,115 in particular.

Working Mechanism

A field-effect transistor is based on a three-terminal coolum (drain, gate, and source) that creates an electronic field at the gate. This electronic field then establishes a conductive channel between the source and the drain. When the voltage at the gate reaches a certain threshold, the electronic field causes an inversion layer to form near the source and drain, thus constructing a channel from source to drain. When the channel is formed the transistor is considered to be in the teat or on state. When the gate voltage is equal to, or below the threshold, the transistor is said to be off or in the cut off state. The main benefit of field-effect transistors is that they can be easily switched using small gate voltage changes. This makes them ideal for applications such as signal switching where fast and reliable switching is necessary.

BUK9Y29-40E,115

The BUK9Y29-40E,115 is an Enhancement-mode FET, making it ideal for applications requiring high efficiency and low voltage switching. Its on-state resistance is low, meaning it can handle high levels of current as well as high levels of power. The BUK9Y29-40E,115 has a maximum drain to source voltage of 40V and a maximum gate to source voltage of 20V. It also has a maximum drain current of 11.5A and a maximum junction temperature of 175°C. These features make the BUK9Y29-40E,115 ideal for applications such as high current switch mode power supplies, motor controllers and other industrial or automotive applications.

Conclusion

The BUK9Y29-40E,115 is a single Enhancement-mode field-effect transistor manufactured by NXP Semiconductors. It operates using a static field-effect mechanism, where a current is switched on and off by changing the voltage at the gate. The BUK9Y29-40E,115 has a maximum drain current of 11.5A and a maximum drain to source voltage of 40V, making it ideal for high current switch mode power supplies, motor controllers and other industrial or automotive applications. The high performance and reliability of the BUK9Y29-40E,115 make it an essential device for a variety of different consumer electronics.

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