Allicdata Part #: | 1727-1500-2-ND |
Manufacturer Part#: |
BUK9Y41-80E,115 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 24A LFPAK |
More Detail: | N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9Y41-80E,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.18408 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 64W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 11.9nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9Y41-80E,115 is a class of field-effect transistors (FETs) known as single MOSFETs, whose application field and working principle will be discussed below.
Operation Principle
MOSFET stands for metal-oxide-semiconductor field-effect transistor, which is the most common type of field-effect transistor. In general, FETs are three-terminal voltage-controlled devices. The BUK9Y41-80E,115 operates as a switch and its operation is based on the principle that the voltage applied to its gate controls the flow of current from its source to drain. When voltage is applied to the gate, a conducting channel forms between the source and the drain, allowing current to flow.
Basic Structure
The BUK9Y41-80E,115 consists of a high-quality gate dielectric formed by a semiconductor or insulator, a semiconductor gate electrode, and a semiconductor body in which a channel is formed between the source and the drain. The semiconductor gate electrode is insulated from and relatively close to the surface of the semiconductor body. The magnitude of the voltage required to form the channel, and the current that can be passed through the channel, are controlled by the voltage applied to the gate.
Applications
The BUK9Y41-80E,115 single MOSFETs are used in a wide variety of applications, including amplifiers, amplifiers, high-frequency switching applications, and RF power amplifiers. The single MOSFETs can be used for low-noise amplification and to provide high gain with low distortion. In addition, they can be used to create high-quality audio signals with low noise and low distortion.
Single MOSFETs can also be used for power control circuits. These circuits are used to regulate and control the power supply of a device. They are commonly used in battery powered devices and for automated low-power switch control. Single MOSFETs can also be used to control and adjust the voltage or current in a circuit.
In addition, single MOSFETs are used in pulse width modulation (PWM) circuits. PWM circuits are used to create output signals with a variable duty cycle, allowing the controller to regulate the speed of a motor or other device. Single MOSFETs are also commonly used in motor controllers and light dimmers of high power.
Advantages
Single MOSFETs offer several advantages over other types of FETs, including low gate capacitance and low power consumption. The low gate capacitance of the BUK9Y41-80E,115 allows for fast switching and high speed operation. Also, single MOSFETs typically consume less power than other FETs, making them a cost effective option for many applications.
Single MOSFETs also have a wide operating temperature range and are very durable, making them suitable for use in harsh environments. The single MOSFETs also have a high switching speed, allowing them to be used in a variety of high speed applications. Furthermore, single MOSFETs have a low on-state resistance and a low double-pulse thermal resistance, making them highly efficient.
Disadvantages
Single MOSFETs have some disadvantages as well. The relatively low current carrying capacity of single MOSFETs makes them unsuitable for high-current applications. Also, the single MOSFETs require a large amount of gate drive current, making them difficult to control in some applications. Finally, the high switching speed of single MOSFETs can cause excessive heat, leading to early device failure.
In conclusion, the BUK9Y41-80E,115 single MOSFETs are widely used in a variety of applications. Their advantages include low gate capacitance, low power consumption, wide operating temperature range, high switching speed, low on-state resistance, and low double-pulse thermal resistance. However, their relatively low current carrying capacity, large amount of gate drive current, and susceptibility to heat can cause problems in some applications. It is important to take these factors into account when selecting a single MOSFET for a particular application.
The specific data is subject to PDF, and the above content is for reference
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