Allicdata Part #: | 296-39993-2-ND |
Manufacturer Part#: |
CSD17570Q5B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8VSON |
More Detail: | N-Channel 30V 100A (Ta) 3.2W (Ta) Surface Mount 8-... |
DataSheet: | CSD17570Q5B Datasheet/PDF |
Quantity: | 2500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.69 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 121nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD17570Q5B is a single N-channel MOSFET transistor. It has a wide variety of applications in the electronics industry, ranging from low-current switching to high-current amplifiers. This transistor has a low on-state resistance of 5 milliohms, which makes it an ideal choice for high-efficiency designs.
The CSD17570Q5B is a vertical MOSFET transistor that is designed for high breakdown voltage applications. It has a CISS (Input Capacitance Isolation Structure) gate structure for improved gate capacitance and gate-saturation voltage. The device can handle up to 100 volts of drain-source voltage and has an absolute maximum rating of 175 watts of drain current when the ambient air temperature is less than 25 degrees Celsius.
The working principle of the CSD17570Q5B is simple. It is controlled by the gate voltage, which is applied between the gate and source terminals of the device. A positive voltage applied to the gate biases the transistor in the on-state, allowing current to flow between the drain and source terminals. A negative voltage applied to the gate biases the device in the off-state, preventing current from flowing between the drain and source terminals.
The most common application of the CSD17570Q5B is in power management and motor control circuits. It is also used in power amplifiers, RF amplifiers, switching circuits and RF power attenuators. Additionally, it is used in various consumer electronics such as remote control units, battery chargers, and charging circuits.
When used in high-side and low-side motor control circuits, the transistor is typically used to switch and control motors at high or low voltages. The device can also be used as a power switch to turn off or on components in electronic circuits. Other applications include level shifting, load switching and small signal switching.
Overall, the CSD17570Q5B is a versatile, reliable and efficient single N-channel MOSFET transistor. It has a low on-state resistance and is ideal for high-efficiency designs. Its wide variety of applications range from low-current switching to high-current amplifiers. This makes it a great choice for many consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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