| Allicdata Part #: | 296-36445-2-ND |
| Manufacturer Part#: |
CSD18532NQ5B |
| Price: | $ 0.80 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 60V 22A 8VSON |
| More Detail: | N-Channel 60V 22A (Ta), 100A (Tc) 3.2W (Ta) Surfac... |
| DataSheet: | CSD18532NQ5B Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.80000 |
| 10 +: | $ 0.77600 |
| 100 +: | $ 0.76000 |
| 1000 +: | $ 0.74400 |
| 10000 +: | $ 0.72000 |
| Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSON-CLIP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5340pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD18532NQ5B is an advanced FET (Field Effect Transistor) ideal for switching and amplifying electronic signals. It belongs to a family of Field-Effect Transistors (FETs) and MOSFETs (metal-oxide-semiconductor FETs). This family of semiconductors are widely used in numerous applications due to their low-impedance control characteristics and fast switching capabilities. The CSD18532NQ5B is designed to operate using single power supplies, making it an ideal choice for those who cannot use two power supplies. It is built using silicon technology, which enables it to achieve the lowest possible on-resistance ratings.
The CSD18532NQ5B\'s application field is vast and suitable for almost any type of electronic device, from simple audio amplifiers to complex communication systems. It can be used to drive a variety of loads, such as motors, relays, and sensors. The device offers high-precision variable gain control and a wide dynamic range. Furthermore, its fast switching speed allows for an improved response time when controlling various types of loads.
The working principle of the CSD18532NQ5B is based on a process called “channel compensation.” This process takes into consideration the “body effect” of the silicon and helps to maintain a constant drain current. The body effect is an inherent phenomenon in MOSFETs that causes the threshold voltage to change according to the current applied to the channel. The channel compensation technique used in the CSD18532NQ5B compensates for the body effect and helps to achieve a high degree of accuracy when controlling the device.
The CSD18532NQ5B is designed to be used in high-performance systems. It offers low on-resistance values at 5 V and 7 V gate drives, and high break-down voltage of 500 V. Also, its low gate-charge and fast switching characteristics make it suitable for applications where variable switching speeds are desired. Furthermore, the device can be operated with a single supply of up to 15 V and features a low gate-threshold voltage of 1.4 V.
The CSD18532NQ5B FET is an ideal choice for anyone looking for a reliable solution for their electronic device. Its application field is vast enough to cover most applications and its fast switching capabilities make it especially suitable for high-precision and high-dynamic usage. Furthermore, the device is designed to operate with single power supplies and has low on-resistance values.
The specific data is subject to PDF, and the above content is for reference
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CSD18532NQ5B Datasheet/PDF