CSD16407Q5C Allicdata Electronics
Allicdata Part #:

296-25664-2-ND

Manufacturer Part#:

CSD16407Q5C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 25V 100A 8SON
More Detail: N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surfac...
DataSheet: CSD16407Q5C datasheetCSD16407Q5C Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON-CLIP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The CSD16407Q5C is a fifth-generation enhancement-mode high-speed (100V) N-channel MOSFET. It belongs to the Canon Super-Junction product family and is available in a standard TO-220 package.

This MOSFET offers excellent switching performance and low resistance characteristics, making it suitable for a variety of applications. These include high-power and high-speed switching, power converters, synchronous rectification, and high-frequency DC-DC converters.

The CSD16407Q5C has been designed for high-speed switching applications using the traditional enhancement-mode approach. This means that it has a high-resistance body and no gate threshold voltage. By using the traditional approach, this MOSFET allows for lower power consumption, higher charging efficiency, and improved switching times.

The CSD16407Q5C features a wide range of other features that make it suitable for a variety of applications. These include:

  • N-channel for low RDS(on)
  • High-speed switching capability
  • Low output capacitance
  • Fully-automated manufacturing process
  • Integrated protection circuit

The working principle behind this MOSFET is relatively straightforward. It uses an enhancement-mode structure, meaning that its input characteristics are controlled with no gate threshold voltage. This allows the current to quickly flow through the channel when the gate voltage is driven above the source voltage. The channel silicon is then held completely open, and the MOSFET can conduct the desired current or voltage. When the gate voltage is less than the source voltage, no current flows through the channel.

This MOSFET is a great option for a variety of applications. It offers excellent performance at a high-speed, a wide variety of features, and low resistance characteristics. It is also manufactured using an automated process and comes with an integrated protection circuit, making it suitable for a wide variety of applications that require high-power and high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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