CSD18509Q5BT Discrete Semiconductor Products

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The CSD18509Q5BT is an unipolar, n-channel, Normal-Level, high voltage, and high current capability device. It is an enhancement-mode HMOS transistor. The device is fabricated utilizing proprietary technologies which reduce on-state resistance and provide improved avalanche characteristics. This device is suitable for use in high voltage power supply systems.

The device consists of a silicon gate, anodically bonded to a glassfrit bond pad, and a silicon dioxide (SiO2) drain-ancode dielectric layer. It also has a high voltage (HV) silicate gate oxide layer. Both the gate and drain electrodes are surrounded by a HV drain-gate oxide layer. Furthermore, the device has an extended drain-gate connection and a low voltage field plate. This provides the CSD18509Q5BT with excellent heat dissipation in the gate-drain region and ensures optimal gate voltage.

The CSD18509Q5BT is designed for use in applications requiring high voltage power supplies. It is used to provide power to systems that require high current or high voltage in a wide range of applications such as electric vehicles, power supplies, motor control, and industrial automation. This device also has a fast switching speed and low gate-drain capacitance that makes it ideal for powering high power load switches, resonant converters, and high voltage power converters.

In terms of its working principle, the CSD18509Q5BT is an n-channel device. Its operation is based on P-N junction theory. When activated, it connects the drain to the source, thus turning it on. This device has an extended drain-gate connection that allows for an improved off-state drain-gate capacitance and minimized diode losses. The CSD18509Q5BT can be used in both enhancement-mode and depletion-mode operation.

The device has low on-resistance and low gate-drain capacitance that make it suitable for high-speed applications. It also has a high voltage-to-current (V/I) ratio that makes it suitable for use with high voltage systems. When used in enhancement mode applications, it can be configured to provide the desired high current drive. In addition, the CSD18509Q5BT is a fully protected device that meets the industry standards for protection against electrostatic discharge.

The CSD18509Q5BT offers reliable performance in high voltage applications due to its excellent electrical characteristics. It has low on-state resistance, low diode losses, and a low gate-drain capacitance which makes it ideal for powering high power load switches and resonant converters. Additionally, its extended drain-gate connection and a low voltage field plate make it suitable for use in high voltage power supplies.

In summary, the CSD18509Q5BT is an unipolar, n-channel, Normal-Level, high voltage, and high current capability device that is very useful for powering high-current/high voltage applications such as electric vehicles, power supplies, motor control, and industrial automation. The device has a fast switching speed, low gate-drain capacitance, and an extended drain-gate connection, which provide excellent protection from electrostatic discharge. Additionally, the device has low on-resistance and low diode losses, which make it suitable for high-speed applications.

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