CSD17551Q5A Discrete Semiconductor Products

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The CSD17551Q5A is a single N-Channel 10 V (D-S), 14 mΩ (G-S) ultra high-density trench power, field-effect transistor (FET), designed for switching and low-level operations. Due to its high quality and efficient performance, the CSD17551Q5A has many uses in a variety of fields.

The primary application field of the CSD17551Q5A is power management in a variety of devices, such as mobile phones, notebook computers and digital cameras. The main benefits of using this FET are low power dissipation, high output voltage and high efficiency. In addition, it has excellent thermal stability and fast switching speed, which further ensure its outstanding performance in demanding applications.

The CSD17551Q5A was designed using the unique Ultra High-Density Trench Power (UDTP) process, a patented technology developed by Texas Instruments. This process ensures the highest field-effect transistor density, resulting in a compact size with low power consumption and high performance. The process also ensures excellent temperature stability, allowing the CSD17551Q5A to operate reliably even in extreme temperatures.

The CSD17551Q5A has a max drain current of 10A, max drain-source voltage of 10V and a drain-source on-resistance (RDSON) of 14mΩ. It features a high-speed, low reverse-transfer capacitance (CRSS) panel that gives it a fast switching speed of 1.2ns. Furthermore, it offers a wide operating temperature range of -55°C to +150°C, allowing it to be used in a variety of applications.

The CSD17551Q5A works using the principle of field effect transistors, or FETs. FETs are devices that use an electric field to control the flow of electrons through a solid-state semiconductor material. The FET has two terminals, the source and the drain, which are connected to the gate electrode. The gate electrode is used to apply an electric field to the semiconductor material, and the amount of current flowing through the FET depends on the size and strength of this field. When the electric field is applied, it causes the electrons to move through the semiconductor material. This results in a flow of electrons from the source to the drain and serves as the basis of the device’s operation.

The CSD17551Q5A is an excellent choice for applications that demand low power, fast switching and high efficiency. Its high power dissipation and low on-resistance make it an ideal choice for applications where low power consumption and high performance are required. Its compact size and wide operating temperature range make it suitable for use in a variety of demanding applications. Its excellent temperature stability ensures that it will perform reliably in extreme temperatures. The CSD17551Q5A is a great choice for any application requiring efficient and reliable power management.

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