CSD17313Q2Q1T Allicdata Electronics
Allicdata Part #:

CSD17313Q2Q1T-ND

Manufacturer Part#:

CSD17313Q2Q1T

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 5A 6WSON
More Detail: N-Channel 30V 5A (Ta) 2.4W (Ta), 17W (Tc) Surface ...
DataSheet: CSD17313Q2Q1T datasheetCSD17313Q2Q1T Datasheet/PDF
Quantity: 1000
1750 +: $ 0.17620
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WSON (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): +10V, -8V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The CSD17313Q2Q1T is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is specially designed for applications in high-current power switches. It is a single N-channel device that can provide up to 30A continuous drain current and 175A pulsed drain current. It has an RDS (on) of only 0.032Ohm and a maximum voltage rating of 55V.

MOSFETs work on the principle of modulation of an electric field. When a voltage is applied to the gate of a MOSFET, it creates an electric field that attracts or repels the electrons in the MOSFET\'s channel. This modulation of the electric field causes a change in conductivity of the channel, modulating the current flow through it. MOSFETs are digital devices, meaning that the channel is either completely on or completely off, depending on the voltage applied to the gate.

The CSD17313Q2Q1T is specially designed for high-current switching applications. Its low RDS (on) means that it has minimal resistance when on, and its high current rating means that it can handle currents of up to 175A. Its wide voltage rating means that it can be employed in systems with voltages ranging from 5V to 55V. This makes the CSD17313Q2Q1T an ideal choice for applications with high current or high voltage requirements.

The CSD17313Q2Q1T is also very reliable, with an operating temperature range of -40°C to +150°C and a capacitance of 1.5nF. It is also housed in a compact 3.3V package, making it ideal for applications where board space is limited. The CSD17313Q2Q1T is also ESD protected, providing added protection from electrostatic discharge.

In summary, the CSD17313Q2Q1T is a single N-channel MOSFET specially designed for high-current switching applications. It has an RDS (on) of 0.032Ohm and a maximum voltage rating of 55V, making it ideal for systems with high current or high voltage requirements. It is also very reliable, with an operating temperature range of -40°C to +150°C and a capacitance of 1.5nF, and is housed in a compact 3.3V package. The CSD17313Q2Q1T is also ESD protected, providing added protection from electrostatic discharge.

The specific data is subject to PDF, and the above content is for reference

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