| Allicdata Part #: | 296-47756-2-ND |
| Manufacturer Part#: |
CSD18512Q5B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | 40V N CH MOSFET |
| More Detail: | N-Channel 40V 211A (Tc) 139W (Tc) Surface Mount 8-... |
| DataSheet: | CSD18512Q5B Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSON-CLIP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 139W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7120pF @ 20V |
| Vgs (Max): | ±20V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 211A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD18512Q5B is a standard P-channel MOSFET semiconductor device. It is a type of field-effect transistor, or FET. This particular MOSFET is referred to as single-gate and features a relatively low saturation voltage.
There are many different applications for the CSD18512Q5B MOSFET. These include power management, voltage level shifting, and various switching applications. The device is typically used in high voltage or power management applications, due to its low on-resistance and low saturation-voltage ratings. It can also be used in various signal-conditioning applications.
The CSD18512Q5B MOSFET operates on the principle of electrostatic charge. This is based on the idea that if two plates, with an insulating material in between them, are subjected to an electrostatic charge, the electrons move away from one plate and towards the other in an attempt to equalize the charge. This is known as the electric field effect, and it is this effect that allows the MOSFET to function.
At the heart of the CSD18512Q5B MOSFET is the MOS (metal oxide semiconductor structure). This structure consists of two pieces: the gate and the source. The gate is the controlling element, and when a voltage is applied to it, it creates an electric field which in turn attracts electrons, allowing them to flow freely through the source material.
The electrons then move through the source and into the drain, resulting in an electric current. The amount of current that can flow through the device is determined by several factors, such as the voltage applied to the gate, the channel width, and the channel length. By adjusting any of these factors, the current that can pass through the MOSFET can be adjusted. This makes the CSD18512Q5B MOSFET an ideal device for use in power management, signal conditioning, and Switching applications.
In summary, the CSD18512Q5B MOSFET is a standard single gate P-channel MOSFET device. It is typically used in high voltage or power management applications, due to its low on-resistance and low saturation voltage ratings. This device operates on the principle of electrostatic charge, and the amount of current that can pass through the device can be adjusted by adjusting the gate voltage, channel width, and channel length. Its use in power management, signal conditioning, and switching applications make the CSD18512Q5B a useful and versatile device.
The specific data is subject to PDF, and the above content is for reference
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CSD18512Q5B Datasheet/PDF