
Allicdata Part #: | CSD18534Q5AT-ND |
Manufacturer Part#: |
CSD18534Q5AT |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CHANNEL 60V 50A 8VSON |
More Detail: | N-Channel 60V 50A (Ta) 3.1W (Ta), 77W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.37000 |
10 +: | $ 0.35890 |
100 +: | $ 0.35150 |
1000 +: | $ 0.34410 |
10000 +: | $ 0.33300 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11.1nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 9.8 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD18534Q5AT is a normally-off, N-channel MOSFET transistor. It is designed to deliver high performance and power, enabling the user to maintain a steady voltage rating of 18V. This FET transistor is mainly used for a variety of applications such as power line protection, power switch, amplifier, speed control, current sensing, and power factor correction.
The CSD18534Q5AT also stands out due to its low gate charge and fast switching speed. These features allow the device to quickly reach a high-performance equilibrium state. The device is further enhanced by its ability to handle up to -50V of drain-source voltage while maintaining an internal collector current of 1A.
When it comes to its working principle, the CSD18534Q5AT operates in the same manner as other FET transistors. It works by having negative electrons move into the channel and then out to the drain terminal. The source terminal of the MOSFET is connected to the positive voltage, allowing the electrons coming from the gate to be attracted to the negative voltage in the channel. This attraction creates an electrical field and pushes the negative electrons from the source to the drain terminal.
The CSD18534Q5AT offers many advantages over other FETs and MOSFETs, including its low gate charge, fast switching speed, high current handling capability, and wide drain-source breakdown voltage rating. Its efficient power-handling abilities make it a popular choice for use in power switches and protectors.
In addition, the CSD18534Q5AT can also be used in high-frequency amplifiers and current sensing circuits. Its high-frequency operation also allows it to be used in radio frequency systems and as a radio frequency switch. While its capabilities are impressive, it should be noted that the device can also have a limited current capacity when placed in high-drain applications.
Given its wide array of application fields and working principles, the CSD18534Q5AT is an ideal choice for a wide range of applications. Its features give it the edge over other transistors, making it a favorite amongst a variety of users.
The specific data is subject to PDF, and the above content is for reference
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