CSD18536KTTT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CSD18536KTTT is a N-channel, logic level, metal-oxide-semiconductor field-effect transistor (MOSFET) from Texas Instruments. A MOSFET is a three-terminal field-effect transistor (FET) wherein the current conduction and depletion layers are isolated from the semiconductor substrate. The current through the MOSFET is controlled by the gate, which is insulated from the drain and source terminals.

The CSD18536KTTT is designed for low voltage level shift and high-side/low-side switching applications. It has a drain-source breakdown voltage of 60 volts, an on-resistance of 2.45 ohms, a drain current of 5 amps, and a maximum power dissipation of 2.7 watts. The CSD18536KTTT has an extremely low threshold voltage of 0.35 volts, making it suitable for low voltage level shift applications.

The CSD18536KTTT features internal ESD (electrostatic discharge) protection, and is designed for operation over a temperature range of -55°C to 175°C. It has an isolation rating of 1.3kV, and a gate oxide thickness of 0.75nm. The device has typical start-up delay of 10ns and turn-off delay times of 10ns.

The working principle of the CSD18536KTTT is based on the MOSFET. When a voltage is applied to the gate, it induces a current between the source and the drain, driving it to the relevant level. This is known as field-effect modulation. As the voltage applied to the gate increases, the drain-source current also increases, reaching a certain consistent level. When the gate voltage is reversed, the drain-source current is reversed, and the device shuts off.

The CSD18536KTTT is well-suited for a range of low voltage level shift and high-side/low-side switching applications. It is ideal in automotive and industrial systems, including power converters, motor drivers and lighting circuits. It can also be used in telecommunication systems and computers. The CSD18536KTTT is a cost-effective, reliable solution for these applications, due to its low threshold voltage, wide temperature range, and ESD protection.

The specific data is subject to PDF, and the above content is for reference